Datasheet > CD214B-R3400

CD214B-R3400

更新时间： 2024-11-11 04:52:15

品牌	Logo	应用领域
伯恩斯 - BOURNS		/
页数	文件大小	规格书
4页	356K
描述
CD214B-R350~R31000 Glass Passivated Rectifiers

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CD214B-R3400 数据手册

Features

■ Lead free as standard

■ RoHS compliant*

■ Glass passivated chip

■ Low reverse leakage current

■ Low forward voltage drop

■ High current capability

CD214B-R350~R31000 Glass Passivated Rectifiers

General Information

The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip

DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Glass

Passivated Rectifier Diodes offer a forward current of 3.0 A with a choice of repetitive peak reverse voltage of 50 V up to 1000 V.

Bourns^®Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration

minimizes roll away.

Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)

CD214B-

R3400

Parameter

Symbol

Unit

R350

R3100

R3200

R3600

R3800

R31000

Maximum Repetitive

Peak Reverse Voltage

100

200

400

280

400

600

800

1000

RRM

Maximum RMS Voltage

140

200

420

600

560

800

700

RMS

Maximum DC

Blocking Voltage

100

1000

Max. Average Forward

Rectified Current¹

3.0

5.0

(AV)

DC Reverse Current @

Rated DC Blocking Voltage

µA

(@T = 25 °C)

DC Reverse Current @

Rated DC Blocking Voltage

µA

(@T = 125 °C)

Typical Junction Capacitance²

1.0

Maximum Instantaneous

Forward Voltage @ 1 A

Typical Thermal Resistance³

θJL

°C/W

Peak forward surge current

8.3 ms single half sine-wave

superimposed on rated load

(JEDEC Method)

115

FSM

Notes:

1 See Forward Derating Curve.

2 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC.

3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 ˝ x 0.2 ˝ (5.0 mm x 5.0 mm) copper pad areas.

Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)

Parameter

Symbol

CD214B-R350~R31000

-65 to +175

Unit

°C

Operating Temperature Range

Storage Temperature Range

TSTG

-65 to +175

°C

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

12 3 4

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与CD214B-R3400相关器件

型号	品牌	获取价格	描述	数据表
CD214B-R350	BOURNS	获取价格	CD214B-R350~R31000 Glass Passivated Rectifiers
CD214B-R3600	BOURNS	获取价格	CD214B-R350~R31000 Glass Passivated Rectifiers
CD214B-R3800	BOURNS	获取价格	CD214B-R350~R31000 Glass Passivated Rectifiers
CD214B-S3G	BOURNS	获取价格	Rectifier Diode,
CD214B-S3M	BOURNS	获取价格	Rectifier Diode,
CD214B-T100A	BOURNS	获取价格	CD214B Transient Voltage Suppressor Diode Series
CD214B-T100A	SUNMATE	获取价格	600W patch TVS transient suppression diode SMB 100V
CD214B-T100ALF	BOURNS	获取价格	Trans Voltage Suppressor Diode, 400W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO-
CD214B-T100CA	SUNMATE	获取价格	600W patch TVS transient suppression diode SMB 100V
CD214B-T100CA	BOURNS	获取价格	CD214B Transient Voltage Suppressor Diode Series

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