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CD214B-R2200 PDF预览

CD214B-R2200

更新时间： 2024-11-11 04:52:15
品牌 Logo 应用领域
伯恩斯 - BOURNS 整流二极管光电二极管
页数 文件大小 规格书
4页 356K
描述
CD214B-R250~R21000 Glass Passivated Rectifiers

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中文翻译

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CD214B-R2200 技术参数

是否Rohs认证： 符合生命周期：End Of Life
零件包装代码：DO-214AA包装说明：ROHS COMPLIANT, PLASTIC, SMB, 2 PIN
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.57应用：GENERAL PURPOSE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
最大非重复峰值正向电流：65 A元件数量：1
相数：1端子数量：2
最大输出电流：2 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：200 V表面贴装：YES
端子面层：Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

CD214B-R2200 数据手册

 浏览型号CD214B-R2200的Datasheet PDF文件第2页浏览型号CD214B-R2200的Datasheet PDF文件第3页浏览型号CD214B-R2200的Datasheet PDF文件第4页 
Features  
■ Lead free as standard  
■ RoHS compliant*  
■ Glass passivated chip  
■ Low reverse leakage current  
■ Low forward voltage drop  
■ High current capability  
CD214B-R250~R21000 Glass Passivated Rectifiers  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip  
DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Glass  
Passivated Rectifier Diodes offer a forward current of 2.0 A with a choice of repetitive peak reverse voltage of 50 V up to 1000 V.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
CD214B-  
R2400  
Parameter  
Symbol  
Unit  
R250  
R2100  
R2200  
R2600  
R2800  
R21000  
Maximum Repetitive  
Peak Reverse Voltage  
V
V
50  
100  
200  
400  
280  
400  
600  
800  
1000  
V
V
V
RRM  
Maximum RMS Voltage  
35  
50  
70  
140  
200  
420  
600  
560  
800  
700  
RMS  
Maximum DC  
Blocking Voltage  
V
100  
1000  
DC  
Max. Average Forward  
Rectified Current1  
I
2.0  
5.0  
A
(AV)  
DC Reverse Current @  
Rated DC Blocking Voltage  
I
µA  
R
R
(@T = 25 °C)  
J
DC Reverse Current @  
Rated DC Blocking Voltage  
I
30  
µA  
(@T = 125 °C)  
J
Typical Junction Capacitance2  
C
25  
1.0  
16  
pF  
V
J
Maximum Instantaneous  
Forward Voltage @ 1 A  
Typical Thermal Resistance3  
V
F
R
θJL  
°C/W  
Peak forward surge current  
8.3 ms single half sine-wave  
superimposed on rated load  
(JEDEC Method)  
I
65  
A
FSM  
Notes:  
1 See Forward Derating Curve.  
2 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC.  
3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 ˝ x 0.2 ˝ (5.0 mm x 5.0 mm) copper pad areas.  
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
TJ  
CD214B-R250~R21000  
-65 to +175  
Unit  
°C  
Operating Temperature Range  
Storage Temperature Range  
TSTG  
-65 to +170  
°C  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234

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