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CD214B-F3150 PDF预览

CD214B-F3150

更新时间: 2024-11-11 04:52:15
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
4页 319K
描述
CD214B-F350~F3600 Surface Mount Fast Response Rectifiers

CD214B-F3150 数据手册

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Features  
Lead free device (RoHS Compliant*)  
Low reverse leakage current  
Low forward voltage drop  
High current capability  
CD214B-F350~F3600 Surface Mount Fast Response Rectifiers  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip  
DO-214AA (SMB) size format, which offers PCB real estate savings and are considerably smaller than most competitive parts. The Glass  
Passivated Rectifier Diodes offer a forward current of 3.0 A with a choice of repetitive peak reverse voltage of 50 V up to 600 V.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
CD214B-  
Parameter  
Symbol  
Unit  
F350  
F3100  
F3150  
F3200  
F3400  
F3600  
Maximum Repetitive  
Peak Reverse Voltage  
V
V
50  
100  
150  
200  
400  
600  
V
RRM  
Maximum RMS Voltage  
35  
50  
70  
105  
150  
140  
200  
280  
400  
420  
600  
V
V
RMS  
Maximum DC Blocking Voltage  
V
100  
DC  
Maximum Average Forward  
Rectified Current1  
I
3.0  
5.0  
A
(AV)  
DC Reverse Current @ Rated DC  
I
µA  
R
R
Blocking Voltage (@T = 25 °C)  
J
DC Reverse Current @ Rated DC  
I
120.0  
10  
µA  
pF  
Blocking Voltage (@T = 125 °C)  
J
Typical Junction Capacitance2  
C
J
Maximum Instantaneous  
Forward Voltage @ 1 A  
V
F
0.95  
1.25  
1.7  
V
Typical Thermal Resistance3  
R
34  
100  
35  
°C/W  
θJA  
Peak forward surge current 8.3 ms  
single half sine-wave superimposed on  
rated load (JEDEC Method)  
I
A
FSM  
Maximum Reverse Recovery Time4  
T
ns  
rr  
Notes:  
1 See Forward Derating Curve.  
2 Measured at 1 MHz and an applied reverse voltage of 4.0 V.  
3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2 ˝ (5.0 x 5.0 mm) copper pad areas.  
4 Reverse recovery test condition: IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
CD214B-F350~F3600  
Unit  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
TSTG  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

CD214B-F3150 替代型号

型号 品牌 替代类型 描述 数据表
ER3CB-TP MCC

类似代替

Rectifier Diode, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

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