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CD214B-B250 PDF预览

CD214B-B250

更新时间: 2024-11-11 04:52:15
品牌 Logo 应用领域
伯恩斯 - BOURNS 整流二极管光电二极管
页数 文件大小 规格书
4页 341K
描述
CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode

CD214B-B250 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.91Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:50 V表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CD214B-B250 数据手册

 浏览型号CD214B-B250的Datasheet PDF文件第2页浏览型号CD214B-B250的Datasheet PDF文件第3页浏览型号CD214B-B250的Datasheet PDF文件第4页 
Features  
Lead free versions available  
RoHS compliant (lead free version)*  
Reverse voltage from 20 to 60 V  
Forward current of 1 A  
High current capability  
For use in low voltage high frequency  
inverters, free wheeling and polarity  
protection applications  
CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly  
smaller electronic components.  
Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AA (SMB) size format, which offer PCB  
real estate savings and are considerably smaller than most competitive parts. The Schottky Rectifier Diodes offer a forward current of 1 A with  
a choice of repetitive peak reverse voltage of 20 V up to 60 V.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration  
minimizes roll away.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
CD214B-  
B140  
Parameter  
Symbol  
Unit  
V
B120  
B130  
B150  
B160  
Forward Voltage (Max.)  
V
F
0.5  
0.5  
0.5  
110  
0.5  
0.7  
0.7  
(I = 2 A)  
f
Typical Junction  
Capacitance*  
C
T
pF  
mA  
Reverse Current (Max.)  
at Rated V )  
I
R
R
*
Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
Absolute Ratings (@ T = 25 °C Unless Otherwise Noted)  
A
CD214B-  
B140  
Parameter  
Symbol  
Unit  
B120  
B130  
B150  
B160  
Repetitive Peak  
Reverse Voltage  
V
RRM  
20  
30  
40  
50  
60  
V
Reverse Voltage  
V
20  
14  
30  
21  
40  
28  
1
50  
35  
60  
42  
V
V
A
R
Maximum RMS Voltage  
Avg. Forward Current  
V
RMS  
I
O
Forward Current,  
Surge Peak  
(60 Hz, 1 cycle)  
I
30  
A
surge  
Typical Thermal  
Resistance**  
R
ΘJL  
20  
°C/W  
Storage Temperature  
Junction Temperature  
T
-55 to +150  
-55 to +125  
°C  
°C  
STG  
T
J
** Thermal resistance junction to lead.  
Reliable Electronic Solutions  
Asia-Pacific:  
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116  
Europe:  
Tel: +41-41 768 5555 • Fax: +41-41 768 5510  
The Americas:  
Tel: +1-951 781-5500 • Fax: +1-951 781-5700  
www.bourns.com  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

CD214B-B250 替代型号

型号 品牌 替代类型 描述 数据表
CD214B-B250LF BOURNS

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