CAT28C65BXI-90T

更新时间： 2024-10-30 06:46:15

品牌	Logo	应用领域
安森美 - ONSEMI		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
13页	84K
描述
64K-Bit CMOS PARALLEL EEPROM

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数据手册

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CAT28C65BXI-90T 数据手册

CAT28C65B

64K-Bit CMOS PARALLEL EEPROM

FEATURES

■ Fast read access times:

■ Commercial, industrial and automotive

– 90/120/150ns

temperature ranges

■ Low power CMOS dissipation:

– Active: 25 mA max.

■ Automatic page write operation:

– 1 to 32 bytes in 5ms

– Standby: 100 µA max.

– Page load timer

■ Simple write operation:

■ End of write detection:

– Toggle bit

– On-chip address and data latches

– Self-timed write cycle with auto-clear

– DATA polling

– RDY/BUSY

■ Fast write cycle time:

– 5ms max

■ 100,000 program/erase cycles

■ 100 year data retention

■ CMOS and TTL compatible I/O

■ Hardware and software write protection

DESCRIPTION

The CAT28C65B is a fast, low power, 5V-only CMOS

parallel EEPROM organized as 8K x 8-bits. It requires a

simple interface for in-system programming. On-chip

address and data latches, self-timed write cycle with

auto-clear and V_CCpower up/down write protection

eliminate additional timing and protection hardware.

DATA Polling, a RDY/BUSY pin and Toggle status bits

signal the start and end of the self-timed write cycle.

Additionally, the CAT28C65B features hardware and

software write protection.

The CAT28C65B is manufactured using Catalyst’s

advancedCMOSfloatinggatetechnology.Itisdesigned

to endure 100,000 program/erase cycles and has a data

retentionof100years.ThedeviceisavailableinJEDEC-

approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32-

pin PLCC packages.

BLOCK DIAGRAM

8,192 x 8

EEPROM

ARRAY

ROW

DECODER

ADDR. BUFFER

& LATCHES

A –A

INADVERTENT

WRITE

PROTECTION

HIGH VOLTAGE

GENERATOR

32 BYTE PAGE

CONTROL

LOGIC

I/O BUFFERS

DATA POLLING,

TOGGLE BIT &

TIMER

RDY/BUSY LOGIC

I/O –I/O

ADDR. BUFFER

& LATCHES

A –A

COLUMN

DECODER

RDY/BUSY

Characteristics subject to change without notice

Doc. No. MD-1009, Rev. H

12 3 4 5 6 7...13

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