Datasheet > C4D02120A_14

C4D02120A_14

更新时间： 2024-09-17 01:25:51

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	732K
描述
Silicon Carbide Schottky Diode

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中文翻译

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数据手册

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C4D02120A_14 数据手册

C4D02120A

V_RRMꢀꢀꢀꢀꢀꢀ=ꢀꢀꢀꢀ1200ꢀVꢀ

I_F(T_C=135˚C) = 5 A

Q_cꢀ ꢀꢀ ꢀꢀꢀ=ꢀꢀ 11ꢀnC

Silicon Carbide Schottky Diode

Z-Rec^®RectifieR

Features

Package

•ꢀ 1.2kVꢀSchottkyꢀRectiﬁer

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitching

•ꢀ ExtremelyꢀFastꢀSwitching

Beneﬁts

ꢀꢀꢀꢀꢀꢀTO-220-2

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

PINꢀ1

PINꢀ2

CASE

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

Applications

Part Number

C4D02120A

Package

Marking

•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ

•ꢀ PowerꢀFactorꢀCorrection

•ꢀ MotorꢀDrives

ꢀ

TO-220-2

C4D02120

Maximum Ratings (T_C=25°Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

RepetitiveꢀPeakꢀReverseꢀVoltage

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀPeakꢀReverseꢀVoltage

Value Unit

Test Conditions

Note

V_RRM

1200

1300

1200

V_RSM

V_R

T_C=25˚C

T_C=135˚C

T_C=165˚C

I_F

ContinuousꢀForwardꢀCurrentꢀꢀꢀꢀꢀꢀꢀ

8.4

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀPulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀPulse

I_FRM

I_FSM

I_F,Max

P_tot

T_J

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀCurrent

PowerꢀDissipation

16.5

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀPulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀPulse

200

160

T_C=25˚C,ꢀt_P=10ꢀms,ꢀPulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀPulse

T_C=25˚C

T_C=110˚C

˚C

-55 to

+175

OperatingꢀJunctionꢀRange

-55 to

+135

T_stg

StorageꢀTemperatureꢀRange

TO-220ꢀMountingꢀTorque

˚C

8.8

M3ꢀScrew

lbf-in 6-32ꢀScrew

C4D02120A Rev. C

12 3 4 5 6

中文翻译

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