Datasheet > C4D02120E_15

C4D02120E_15

更新时间： 2024-09-17 01:25:51

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	886K
描述
Silicon Carbide Schottky Diode

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中文翻译

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数据手册

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C4D02120E_15 数据手册

C4D02120E

V_RRMꢀꢀꢀꢀꢀꢀ=ꢀꢀꢀꢀ1200ꢀVꢀ

I_F(T_C=135˚C)ꢀ=ꢀ4.5ꢀA

Q_cꢀ ꢀꢀ ꢀꢀꢀ=ꢀꢀ 11ꢀnC

Silicon Carbide Schottky Diode

Z-Rec^®RectifieR

Features

Package

•ꢀ 1.2kVꢀSchottkyꢀRectiﬁer

•ꢀ OptimizedꢀforꢀPFCꢀBoostꢀDiodeꢀApplication

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

TO-252-2

Beneﬁts

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

PINꢀ1

PINꢀ2

CASE

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

Applications

Part Number

Package

Marking

•ꢀ SolarꢀInvertersꢀ

ꢀ

•ꢀ PowerꢀFactorꢀCorrection

C4D02120E

TO-252-2

C4D02120

•ꢀ LEDꢀLightingꢀPowerꢀSupplies

•ꢀ X-RayꢀTubeꢀPowerꢀDrivers

•ꢀ EVꢀChargingꢀandꢀPowerꢀConversion

Maximum Ratings (T_C=25°Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol Parameter

Value

1200

1300

1200

Unit

Test Conditions

Note

V_RRM

V_RSM

V_DC

RepetitiveꢀPeakꢀReverseꢀVoltage

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀBlockingꢀVoltage

4.5

T_C=25˚C

T_C=135˚C

T_C=162˚C

I_F

MaximumꢀDCꢀCurrentꢀꢀꢀꢀꢀꢀꢀ

14.4

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

I_FRM

I_FSM

I_F,Max

P_tot

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀCurrent

PowerꢀDissipation

16.5

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

200

160

T_C=25˚C,ꢀt_P=10ꢀms,ꢀPulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀPulse

51.7

22.4

T_C=25˚C

T_C=110˚C

˚C

-55 to

+175

T_J

OperatingꢀJunctionꢀRange

-55 to

+135

T_stg

StorageꢀTemperatureꢀRange

C4D02120E Rev. G

12 3 4 5 6

中文翻译

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