Datasheet > C2M0160120D

C2M0160120D

更新时间： 2024-11-14 01:24:31

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
9页	826K
描述
N-Channel Enhancement Mode

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中文翻译

获取价格

数据手册

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C2M0160120D 数据手册

V_DS

1200 V

17.7 A

I_D(MAX)

R_DS(on)

@ 25˚Cꢀ

C2M0160120D

160 mΩ

Silicon Carbide Power MOSFET

Z-FET^TMMOSFET

N-Channel Enhancement Mode

Features

Package

•ꢀ High Speed Switching with Low Capacitances

•ꢀ High Blocking Voltage with Low R_DS(on)

•ꢀ Easy to Parallel and Simple to Drive

•ꢀ Resistant to Latch-Up

•ꢀ Halogen Free, RoHS Compliant

Beneﬁts

TO-247-3

•ꢀ HigherꢀSystemꢀEfﬁciency

•ꢀ Reduced Cooling Requirements

•ꢀ Increased System Switching Frequency

Applications

•ꢀ Auxiliary Power Supplies

•ꢀ Solar Inverters

•ꢀ High Voltage DC/DC Converters

•ꢀ High-frequency applications

Part Number

Package

TO-247-3

C2M0160120D

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

Value

Unit

Test Conditions

Note

17.7

Fig. 19

V_GS@20 V, T_C=ꢀ25˚C

V_GS@20 V, T_C=ꢀ100˚C

Continuous Drain Current

I_{DS (DC)}

Pulse width t_P= 50 μs

Pulsed Drain Current

I_{DS (pulse)}

duty limited by T_jmax,T_C=ꢀ25˚C

Gate Source Voltage

Power Dissipation

-10/+25

125

V_GS

P_tot

T_C=25˚C

Fig. 20

Operating Junction and Storage

Temperature

-55 to

+150

˚C

T_J, T_stg

T_L

1.6mm (0.063”) from case for

10s

Solder Temperature

Mounting Torque

260

˚C

8.8

lbf-in

M3 or 6-32 screw

M_d

C2M0160120D Rev. -

12 3 4 5 6 7...9

中文翻译

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