Datasheet > C2M0280120D

C2M0280120D

更新时间： 2024-09-26 01:24:19

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	962K
描述
Silicon Carbide Power MOSFET

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中文翻译

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数据手册

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C2M0280120D 数据手册

V_DS

I_D

1200 V

10 A

25˚C

C2M0280120D

R_DS(on)280 mΩ

Silicon Carbide Power MOSFET

C2M^TMMOSFET Technology

N-Channel Enhancement Mode

Features

Package

•ꢀ High Blocking Voltage with Low On-Resistance

•ꢀ High Speed Switching with Low Capacitances

•ꢀ Easy to Parallel and Simple to Drive

•ꢀ Avalanche Ruggedness

•ꢀ Resistant to Latch-Up

•ꢀ Halogen Free, RoHS Compliant

TO-247-3

Beneﬁts

•ꢀ HigherꢀSystemꢀEfﬁciency

•ꢀ Reduced Cooling Requirements

•ꢀ Increased Power Density

•ꢀ Increased System Switching Frequency

Applications

•ꢀ LED Lighting Power Supplies

•ꢀ High Voltage DC/DC Converters

•ꢀ Industrial Power Supplies

•ꢀ HVAC

Part Number

Package

C2M0280120D

TO-247-3

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

Drain - Source Voltage

Value

Unit

Test Conditions

Note

V_GS= 0 V, I_Dꢀ=ꢀ100ꢀμA

1200

-10/+25

-5/+20

V_DSmax

V_GSmax

V_GSop

Gate - Source Voltage

Absolute maximum values

Recommended operational values

V_GS= 20 V, T_C= 25 °C

V_GS= 20 V, T_C= 100 °C

Continuous Drain Current

Pulsed Drain Current

Fig. 19

I_D

Fig. 22

Fig. 20

I_D(pulse)

P_D

Pulse width t_Plimited by T_jmax

T_C=25 °C, T_J= 150 °C

Power Dissipation

62.5

˚C

-55 to

+150

Operating Junction and Storage Temperature

Solder Temperature

T , T_stg

260

1.6ꢀmmꢀ(0.063”)ꢀfromꢀcaseꢀforꢀ10s

T_L

8.8

lbf-in

Mounting Torque

M3 or 6-32 screw

M_d

C2M0280120D Rev. B, 10-2015

12 3 4 5 6 7...10

中文翻译

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