Datasheet > C2M1000170D

C2M1000170D

更新时间： 2024-09-25 12:54:43

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
7页	620K
描述
Silicon Carbide Power MOSFET Z-FETTM MOSFET

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中文翻译

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数据手册

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C2M1000170D 数据手册

V_DS

I_D

R_DS(on)

1700 V

4.9 A

25˚C

C2M1000170D

1.0 Ω

Silicon Carbide Power MOSFET

Z-FET^TMMOSFET

N-Channel Enhancement Mode

Features

Package

•ꢀ High Speed Switching with Low Capacitances

•ꢀ High Blocking Voltage with Low R_DS(on)

•ꢀ Easy to Parallel and Simple to Drive

•ꢀ Resistant to Latch-Up

•ꢀ Halogen Free, RoHS Compliant

Beneﬁts

TO-247-3

•ꢀ HigherꢀSystemꢀEfﬁciency

•ꢀ Increased System Switching Frequency

•ꢀ Reduced Cooling Requirements

•ꢀ Increased System Reliability

Applications

•ꢀ Auxiliary Power Supplies

•ꢀ Switch Mode Power Supplies

Part Number

C2M1000170D

Package

TO-247-3

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

Value

Unit

Test Conditions

Note

4.9

3.0

V_GS= 20 V, T_C= 25 °C

V_GS= 20 V, T_C= 100 °C

Continuous Drain Current

Fig. 14

I_{DS (DC)}

Pulse width t_Plimited by T_jmax

T_C= 25 °C

Pulsed Drain Current

5.0

Fig. 16

Fig. 13

I_{DS (pulse)}

Gate Source Voltage

-10/+25

V_GS

P_tot

Power Dissipation

T_C=25 °C, T_J= 150 °C

-55 to

+150

Operating Junction and Storage Temperature

Solder Temperature

˚C

T_J, T_stg

T_L

260

1.6 mm (0.063”) from case for 10s

M3 or 6-32 screw

8.8

lbf-in

Mounting Torque

M_d

C2M1000170D Rev. A

12 3 4 5 6 7

中文翻译

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