Datasheet > C2M0160120D_15

C2M0160120D_15

更新时间： 2024-11-14 01:24:19

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	1105K
描述
Silicon Carbide Power MOSFET

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数据手册

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C2M0160120D_15 数据手册

V_DS

I_D

R_DS(on)

1200 V

19 A

25˚Cꢀ

ꢀ

C2M0160120D

160 mΩ

Silicon Carbide Power MOSFET

C2M^TMMOSFET Technology

N-Channel Enhancement Mode

Features

Package

•ꢀ High Blocking Voltage with Low On-Resistance

•ꢀ High Speed Switching with Low Capacitances

•ꢀ Easy to Parallel and Simple to Drive

•ꢀ Avalanche Ruggedness

•ꢀ Resistant to Latch-Up

•ꢀ Halogen Free, RoHS Compliant

TO-247-3

Beneﬁts

•ꢀ HigherꢀSystemꢀEfﬁciency

•ꢀ Reduced Cooling Requirements

•ꢀ Increased Power Density

•ꢀ Increased System Switching Frequency

Applications

•ꢀ Solar Inverters

•ꢀ Switch Mode Power Supplies

•ꢀ High Voltage DC/DC Converters

•ꢀ LED Lighting Power Supplies

Part Number

C2M0160120D

Package

TO-247-3

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

Drain - Source Voltage

Value

Unit

Test Conditions

Note

V_GS= 0 V, I_Dꢀ=ꢀ100ꢀμA

1200

-10/+25

-5/+20

V_DSmax

V_GSmax

V_GSop

Gate - Source Voltage

Absolute maximum values

Recommended operational values

Fig. 19

V_GS= 20 V, T_C=ꢀ25˚C

V_GS= 20 V, T_C=ꢀ100˚C

Continuous Drain Current

Pulsed Drain Current

I_D

12.5

Fig. 22

Fig. 20

I_D(pulse)

Pulse width t_Plimited by T_jmax

Power Dissipation

125

˚C

T_C=25˚Cꢀ,ꢀT_Jꢀ=ꢀ150ꢀ˚C

P_D

T_J, T_stg

T_L

-55 to

+150

Operating Junction and Storage Temperature

Solder Temperature

260

1.6mmꢀ(0.063”)ꢀfromꢀcaseꢀforꢀ10s

8.8

lbf-in

Mounting Torque

M3 or 6-32 screw

M_d

C2M0160120D Rev. C, 10-2015

12 3 4 5 6 7...10

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