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BZX84C3V9LT3.G PDF预览

BZX84C3V9LT3.G

更新时间: 2024-11-28 13:06:07
品牌 Logo 应用领域
安森美 - ONSEMI 稳压器二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
8页 84K
描述
3.9V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, LEAD FREE, PLASTIC PACKAGE-3

BZX84C3V9LT3.G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.08
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL认证状态:Not Qualified
标称参考电压:3.9 V表面贴装:YES
技术:ZENER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5.13%工作测试电流:5 mA
Base Number Matches:1

BZX84C3V9LT3.G 数据手册

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BZX84B4V7LT1,  
BZX84C2V4LT1 Series  
Zener Voltage Regulators  
225 mW SOT−23 Surface Mount  
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT−23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
http://onsemi.com  
3
1
Cathode  
Anode  
Features  
Pb−Free Packages are Available  
225 mW Rating on FR−4 or FR−5 Board  
Zener Breakdown Voltage Range − 2.4 V to 75 V  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
ESD Rating of Class 3 (>16 KV) per Human Body Model  
Tight Tolerance Series Available (See Page 4)  
3
SOT−23  
CASE 318  
STYLE 8  
1
2
MARKING DIAGRAM  
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily Solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
xxxM  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
xxx = Specific Device Code  
M
=Month Code  
ORDERING INFORMATION  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Device*  
Package  
Shipping  
Total Power Dissipation on FR−5 Board,  
P
BZX84CxxxLT1  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
D
(Note 1) @ T = 25°C  
225  
1.8  
556  
mW  
mW/°C  
°C/W  
A
BZX84CxxxLT1G SOT−23  
(Pb−Free)  
Derated above 25°C  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
BZX84CxxxLT3  
BZX84BxxxLT1  
SOT−23 10,000/Tape & Reel  
Total Power Dissipation on Alumina  
P
D
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
Substrate, (Note 2) @ T = 25°C  
300  
2.4  
417  
mW  
mW/°C  
°C/W  
A
Derated above 25°C  
Thermal Resistance, Junction−to−Ambient  
BZX84BxxxLT1G SOT−23  
(Pb−Free)  
R
q
JA  
Junction and Storage  
Temperature Range  
T , T  
−65 to  
+150  
°C  
BZX84BxxxLT3  
SOT−23 10,000/Tape & Reel  
J
stg  
*The “T1” suffix refers to an 8 mm, 7 inch reel.  
The “T3” suffix refers to an 8 mm, 13 inch reel.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. FR−5 = 1.0 X 0.75 X 0.62 in.  
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
December, 2004 − Rev. 8  
BZX84C2V4LT1/D  
 

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