Datasheet > BZT55C3V9

BZT55C3V9

更新时间： 2024-09-15 12:33:27

品牌	Logo	应用领域
TYSEMI		二极管
页数	文件大小	规格书
3页	206K
描述
500mW Power Dissipation Low reverse current level Very high stability Low noise

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BZT55C3V9 数据手册

Product specification

BZT55C3V9

■ Features

LL-34

Unit: mm

● 500mW Power Dissipation

● Low reverse current level

● Very high stability

2.64REF

0.50

0.35

1.50

1.30

● Low noise

● Ideal for Surface Mountted Application

3.60

3.30

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Power Dissipation

Symbol

Rating

500

Unit

(Note 1)

Forward Voltage @ IF = 200mA

Thermal Resistance, Junction to Ambient Air

Operating and Storage Temperature Range

1.5

RθJA

Tj, TSTG

300

℃/W

℃

-65 to +175

Notes: 1. Valid provided that electrodes are kept at ambient temperature.

■ Electrical Characteristics Ta = 25℃

Zener Voltage Range

(Note 2)

Maximum Zener

Impedance

Maximum Reverse

Current

Type

VZ @ IZT

IZT

ZZT @ IZT

ZZK @ IZK

IZK

Nom (V) Min (V) Max (V)

μA

BZT55C3V9

3.9

3.7

4.1

600

Notes: 2. Tested with pulses, Tp ≤100ms.

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