Datasheet > BZT55C3V9-GS18

BZT55C3V9-GS18

更新时间： 2024-11-06 13:57:19

品牌	Logo	应用领域
威世 - VISHAY		测试二极管
页数	文件大小	规格书
6页	87K
描述
Zener Diode, 3.9V V(Z), 5.1%, 0.5W,

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中文翻译

获取价格

数据手册

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BZT55C3V9-GS18 数据手册

BZT55C...

Vishay Telefunken

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Very high stability

Low noise

Available with tighter tolerances

96 12009

Applications

Voltage stabilization

Order Instruction

Type

BZT55C2V4

Ordering Code

BZT55C2V4–GS08

BZT55C2V4–GS18

Remarks

Tape and Reel (2.500 pcs)

Tape and Reel (10.000 pcs)

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

Type

Symbol

Value

500

Unit

300K/W

thJA

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

on PC board 50 mmx50 mmx1.6 mm

Symbol

thJA

Value

500

Unit

K/W

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol Min

Typ Max Unit

1.5

Document Number 85601

Rev. 4, 12-Mar-01

www.vishay.com

1 (6)

12 3 4 5 6

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