BZM55C3V9TR

更新时间： 2024-11-10 12:58:27

品牌	Logo	应用领域
威世 - VISHAY		二极管齐纳二极管
页数	文件大小	规格书
6页	84K
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中文翻译

获取价格

数据手册

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BZM55C3V9TR 数据手册

BZM55C...

Vishay Telefunken

Silicon Epitaxial Planar Z–Diodes

Features

Saving space

Hermetic sealed parts

Fits onto SOD 323 / SOT 23 footprints

Electrical data identical with the devices

BZT55C... / TZMC...

Very sharp reverse characteristic

Low reverse current level

Very high stability

96 12315

Low noise

Available with tighter tolerances

Applications

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

300K/W

Type

Symbol

Value

500

Unit

thJA

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Test Conditions

Symbol Value Unit

Junction ambient mounted on epoxy–glass hard tissue, Fig. 1

Junction tie point 35 m copper clad, 0.9 mm copper area per electrode

thJL

500

300

K/W

thJA

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol Min

Typ Max Unit

1.5

www.vishay.de • FaxBack +1-408-970-5600

Document Number 85598

Rev. 3, 01-Apr-99

1 (6)

12 3 4 5 6

中文翻译

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