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BZM55C43TR PDF预览

BZM55C43TR

更新时间: 2024-11-11 03:22:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 120K
描述
43V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, MICROMELF-2

BZM55C43TR 数据手册

 浏览型号BZM55C43TR的Datasheet PDF文件第2页浏览型号BZM55C43TR的Datasheet PDF文件第3页浏览型号BZM55C43TR的Datasheet PDF文件第4页浏览型号BZM55C43TR的Datasheet PDF文件第5页浏览型号BZM55C43TR的Datasheet PDF文件第6页 
BZM55C...  
Vishay Telefunken  
Silicon Epitaxial Planar Z–Diodes  
Features  
Saving space  
Hermetic sealed parts  
Fits onto SOD 323 / SOT 23 footprints  
Electrical data identical with the devices  
BZT55C... / TZMC...  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
96 12315  
Low noise  
Available with tighter tolerances  
Applications  
Voltage stabilization  
Order Instruction  
Type  
BZM55C2V4  
BZM55C2V4  
Ordering Code  
BZM55C2V4–TR  
BZM55C2V4–TR3  
Remarks  
Tape and Reel (2.500 pcs)  
Tape and Reel (10.000 pcs)  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
R
300K/W  
P
V
thJA  
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Junction tie point  
Test Conditions  
Symbol  
R
thJA  
Value  
500  
300  
Unit  
K/W  
K/W  
mounted on epoxy–glass hard tissue, Fig. 1  
2
35 m copper clad, 0.9 mm copper area per electrode  
R
thJL  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
Document Number  
Rev. 4, 25-Jun-01  
www.vishay.com  
1 (6)  

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