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BZM55C43-7 PDF预览

BZM55C43-7

更新时间: 2024-11-11 03:22:23
品牌 Logo 应用领域
美台 - DIODES 测试二极管
页数 文件大小 规格书
3页 65K
描述
Zener Diode, 43V V(Z), 6.98%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, MICROMELF-2

BZM55C43-7 技术参数

生命周期:Obsolete零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.63
其他特性:LOW NOISE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:O-LELF-R2
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:43 V表面贴装:YES
技术:ZENER端子形式:WRAP AROUND
端子位置:END最大电压容差:6.98%
工作测试电流:2.5 mABase Number Matches:1

BZM55C43-7 数据手册

 浏览型号BZM55C43-7的Datasheet PDF文件第2页浏览型号BZM55C43-7的Datasheet PDF文件第3页 
BZM55C2V4 - BZM55C75  
500mW SURFACE MOUNT ZENER DIODE  
Features  
·
·
·
·
500mW Power Dissipation  
High Stability  
Low Noise  
D
B
Hemetic Package  
A
Mechanical Data  
·
·
Case: MicroMELF, Glass  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: Cathode Band  
Marking: Cathode Band Only  
Weight: 0.012 grams (approx.)  
MicroMELF  
Dim  
A
Min  
1.8  
Max  
2.0  
·
·
·
B
1.20  
1.25  
C
1.35Æ Typical  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Characteristic  
Symbol  
Pd  
Value  
500  
Unit  
mW  
K/W  
V
Power Dissipation  
Thermal Resistance, Junction to Ambient Air  
Forward Voltage  
Operating and Storage Temperature Range  
(Note 1)  
(Note 1)  
RqJA  
300  
@ IF = 200mA  
VF  
1.5  
Tj, TSTG  
-65 to +175  
°C  
Notes:  
1. Valid provided that electrodes are kept at ambient temperature at a distance of 8.0mm from case.  
2. Tested with pulses, Tp = 100ms.  
DS30005 Rev. D-3  
1 of 3  
BZM55C2V4-BZM55C75  

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