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BZD27C91P-G2 PDF预览

BZD27C91P-G2

更新时间: 2024-11-13 21:18:39
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
6页 171K
描述
DIODE 91 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, PLASTIC, SMF, 2 PIN, Voltage Regulator Diode

BZD27C91P-G2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-219AB
包装说明:R-PDSO-F2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.62
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-219AB
JESD-30 代码:R-PDSO-F2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.8 W
认证状态:Not Qualified标称参考电压:91 V
表面贴装:YES技术:ZENER
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:40
最大电压容差:6.08%工作测试电流:5 mA
Base Number Matches:1

BZD27C91P-G2 数据手册

 浏览型号BZD27C91P-G2的Datasheet PDF文件第2页浏览型号BZD27C91P-G2的Datasheet PDF文件第3页浏览型号BZD27C91P-G2的Datasheet PDF文件第4页浏览型号BZD27C91P-G2的Datasheet PDF文件第5页浏览型号BZD27C91P-G2的Datasheet PDF文件第6页 
BZD27C3V6P to BZD27C200P  
VISHAY  
Vishay Semiconductors  
Voltage Regulator Diodes  
Features  
• Sillicon Planar Zener Diodes  
• Low profile surface-mount package  
• Zener and surge current specification  
• Low leakage current  
• Excellent stability  
• High temperature soldering:  
260 °C/10 sec. at terminals  
Mechanical Data  
Case: JEDEC DO-219AB (SMF®) Plastic Case  
Packaging codes/options:  
G1/ 10 K per 13 " reel, (8 mm tape), 50 K/box  
G2/ 3 K per 7 " reel, (8 mm tape), 30 K/box  
Weight: approx. 10 mg  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Symbol  
Value  
2.3  
Unit  
W
Power dissipation  
T = 80 °C  
P
L
tot  
tot  
1)  
T = 25 °C  
P
W
W
A
0.8  
2)  
Non-repetitive peak pulse power  
dissipation  
P
P
300  
ZSM  
100 µs square pulse  
10/1000 µs waveform (BZD27-  
C7V5P to BZD27-C100P)  
150  
W
W
RSM  
2)  
10/1000 µs waveform (BZD27-  
C110P to BZD27-C200P)  
P
100  
RSM  
2)  
1)  
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (40 µm thick)  
2)  
T = 25 °C prior to surge  
J
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
180  
Unit  
K/W  
1)  
R
R
Thermal resistance junction to ambient air  
Thermal resistance junction to lead  
θ JA  
30  
150  
K/W  
°C  
θ JL  
Maximum junction temperature  
Storage temperature range  
T
j
T
- 55 to + 150  
°C  
S
1)  
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (40 µm thick)  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Min  
Typ.  
Max  
1.2  
Unit  
V
Forward voltage  
I = 0.2 A  
V
F
F
Document Number 85810  
Rev. 4, 16-Sep-03  
www.vishay.com  
1

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