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BZD27C91P-GS08 PDF预览

BZD27C91P-GS08

更新时间: 2024-11-13 12:42:39
品牌 Logo 应用领域
威世 - VISHAY 稳压二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
9页 150K
描述
Zener Diodes with Surge Current Specification

BZD27C91P-GS08 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:DO-219AB包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.51Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-219AB
JESD-30 代码:R-PDSO-F2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.8 W
认证状态:Not Qualified标称参考电压:91 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40最大电压容差:6.08%
工作测试电流:5 mABase Number Matches:1

BZD27C91P-GS08 数据手册

 浏览型号BZD27C91P-GS08的Datasheet PDF文件第2页浏览型号BZD27C91P-GS08的Datasheet PDF文件第3页浏览型号BZD27C91P-GS08的Datasheet PDF文件第4页浏览型号BZD27C91P-GS08的Datasheet PDF文件第5页浏览型号BZD27C91P-GS08的Datasheet PDF文件第6页浏览型号BZD27C91P-GS08的Datasheet PDF文件第7页 
BZD27C3V6P to BZD27C200P  
Vishay Semiconductors  
Zener Diodes with Surge Current Specification  
Features  
• Sillicon Planar Zener Diodes  
• Low profile surface-mount package  
• Zener and surge current specification  
• Low leakage current  
e3  
17249  
• Excellent stability  
• High temperature soldering:  
260 °C/10 sec. at terminals  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Packaging codes/options:  
GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box  
GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box  
Mechanical Data  
Case: JEDEC DO-219AB (SMF ) Plastic case  
Weight: approx. 15 mg  
®
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Power dissipation  
Test condition  
TL = 80 °C  
A = 25 °C  
Symbol  
Ptot  
Value  
2.3  
Unit  
W
0.81)  
300  
T
Ptot  
W
W
100 µs square pulse2)  
Non-repetitive peak pulse power  
dissipation  
PZSM  
10/1000 µs waveform (BZD27-  
C7V5P to BZD27-C100P)2)  
10/1000 µs waveform (BZD27-  
C110P to BZD27-C200P)2)  
PRSM  
PRSM  
150  
100  
W
W
1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (40 µm thick)  
2) TJ = 25 °C prior to surge  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
180  
Unit  
K/W  
Thermal resistance junction to ambient air1)  
Thermal resistance junction to lead  
RthJL  
Tj  
30  
150  
K/W  
°C  
Maximum junction temperature  
Storage temperature range  
TS  
- 55 to + 150  
°C  
1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (40 µm thick)  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Forward voltage  
Test condition  
IF = 0.2 A  
Symbol  
VF  
Min  
Typ.  
Max  
1.2  
Unit  
V
Document Number 85810  
Rev. 1.8, 13-Apr-05  
www.vishay.com  
1

BZD27C91P-GS08 替代型号

型号 品牌 替代类型 描述 数据表
BZD27C91P-M-18 VISHAY

完全替代

DIODE 91 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, HALOGEN FREE

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