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BYW4200B PDF预览

BYW4200B

更新时间: 2024-11-15 22:08:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管快恢复二极管功效快速恢复二极管
页数 文件大小 规格书
6页 105K
描述
HIGH EFFICIENCY FAST RECOVERY DIODE

BYW4200B 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252包装说明:R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.41其他特性:FREE WHEELING DIODE
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.25 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:70 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:4 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向电流:20 µA
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

BYW4200B 数据手册

 浏览型号BYW4200B的Datasheet PDF文件第2页浏览型号BYW4200B的Datasheet PDF文件第3页浏览型号BYW4200B的Datasheet PDF文件第4页浏览型号BYW4200B的Datasheet PDF文件第5页浏览型号BYW4200B的Datasheet PDF文件第6页 
SMBYW04-200  
BYW4200B  
®
HIGH EFFICIENCY FAST RECOVERY DIODE  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
4 A  
200 V  
0.85 V  
150 °C  
2
VF (max)  
Tj (max)  
4 (TAB)  
3
4
FEATURES AND BENEFITS  
SUITED TO SMPS AND DRIVES  
SURFACE MOUNT PACKAGE  
VERY LOW FORWARD LOSSES  
NEGLIGIBLE SWITCHING LOSSES  
HIGH SURGE CURRENT CAPABILITY  
2
3
1(nc)  
SMC  
DPAK  
BYW4200B  
(JEDEC DO-214AB)  
SMBYW04-200  
DESCRIPTION  
Single chip rectifier suited to Switch Mode Power  
Supplies and high frequency converters.  
Packaged in DPAK and SMC, this surface mount  
device is intended for use in low voltage, high  
frequency inverters, free wheeling and rectification  
applications.  
ABSOLUTE RATINGS  
Symbol  
(limiting values)  
Parameter  
Value  
200  
10  
Unit  
V
VRRM  
IF(RMS) RMS forward current  
IF(AV) Average forward current  
Repetitive peak reverse voltage  
A
DPAK  
SMC  
Tcase = 130°C  
Tlead = 70°C  
4
A
δ
= 0.5  
IFSM  
Surge non repetitive forward current  
tp = 10 ms  
sinusoidal  
70  
A
°
C
Tstg  
Tj  
Storage temperature range  
- 65 to + 150  
150  
Maximum operating junction temperature  
°C  
October 1999 - Ed: 4C  
1/6  

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