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BYW52

更新时间: 2024-11-25 22:08:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 53K
描述
Silicon Mesa Rectifiers

BYW52 数据手册

 浏览型号BYW52的Datasheet PDF文件第2页浏览型号BYW52的Datasheet PDF文件第3页浏览型号BYW52的Datasheet PDF文件第4页 
BYW52...BYW56  
Vishay Telefunken  
Silicon Mesa Rectifiers  
Features  
Controlled avalanche characteristics  
Glass passivated junction  
Hermetically sealed package  
Low reverse current  
High surge current loading  
Electrically equivalent diodes:  
BYW52 – 1N5059  
BYW54 – 1N5061  
BYW53 – 1N5060  
BYW55 – 1N5062  
94 9539  
Applications  
Rectifier, general purpose  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
=Repetitive peak reverse voltage  
Test Conditions  
Type  
BYW52 V =V  
BYW53 V =V  
BYW54 V =V  
BYW55 V =V  
BYW56 V =V  
Symbol  
Value  
200  
400  
600  
800  
1000  
50  
Unit  
V
V
V
V
V
A
A
A
R
RRM  
RRM  
RRM  
RRM  
RRM  
R
R
R
R
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
t =10ms, half sinewave  
I
p
FSM  
I
12  
2
FRM  
ϕ=180  
I
FAV  
Pulse avalanche peak power  
t =20 s half sinus wave,  
p
P
R
1000  
W
T =175 C  
j
Pulse energy in avalanche mode, I  
non repetitive  
=1A, T =175 C  
E
R
20  
mJ  
(BR)R  
j
(inductive load switch off)  
i * t–rating  
2
2
2
i *t  
8
A *s  
Junction and storage  
temperature range  
T =T  
–55...+175  
C
j
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
Symbol  
Value  
45  
100  
Unit  
K/W  
K/W  
l=10mm, T =constant  
R
thJA  
R
thJA  
L
on PC board with spacing 25mm  
Document Number 86049  
Rev. 2, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  

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