Datasheet > BYW51G

BYW51G

更新时间： 2024-01-08 09:34:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		整流二极管功效快速恢复二极管
页数	文件大小	规格书
9页	141K
描述
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

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中文翻译

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数据手册

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BYW51G 数据手册

BYW51/F/G/FP/R-200

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 10 A

200 V

Tj (max)

V_F(max)

trr (max)

150 °C

0.85 V

25 ns

TO-220FPAB

BYW51FP-200

FEATURES AND BENEFITS

■

SUITED FOR SMPS

TO-220AB

BYW51-200

VERY LOW FORWARD LOSSES

NEGLIGIBLE SWITCHING LOSSES

HIGH SURGE CURRENT CAPABILITY

INSULATED PACKAGES (ISOWATT220AB /

TO-220FP) :

D²PAK

Insulation voltage = 2000 V DC

Capacitance = 12 pF

BYW51G-200

DESCRIPTION

Dual center tap rectifier suited for Switched Mode

Power Supplies and high frequency DC to DC

converters.

ISOWATT220AB

BYW51F-200

Packaged in TO-220AB, ISOWATT220AB,

TO-220FP, D²PAK or I²PAK, this device is

intended for use in low voltage, high frequency

inverters, free wheeling and polarity protection

applications.

I²PAK

BYW51R-200

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Value

200

Unit

V_RRMRepetitive peak reverse voltage

I_F(RMS)RMS forward current

I_F(AV)

Average forward current TO-220AB / D²PAKTc=120°C Per diode

δ = 0.5

I²PAK

Per device

ISOWATT220AB Tc=95°C Per diode

Per device

Tc=85°C

TO-220FPAB

Per diode

Per device

Surge non repetitive forward current

Storage temperature range

tp=10ms sinusoidal

100

I_FSM

Tstg

- 65 to + 150 °C

150 °C

Maximum operating junction temperature

August 2002 - Ed: 3E

1/9

12 3 4 5 6 7...9

中文翻译

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