5秒后页面跳转
BYW172F PDF预览

BYW172F

更新时间: 2024-10-28 23:14:23
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
4页 141K
描述
Fast Avalanche Sinterglass Diode

BYW172F 技术参数

是否无铅:不含铅生命周期:Obsolete
包装说明:E-LALF-W2针数:2
Reach Compliance Code:unknown风险等级:5.67
Is Samacsys:N应用:FAST SOFT RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.5 VJESD-30 代码:E-LALF-W2
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:3 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:300 V
最大反向电流:1 µA最大反向恢复时间:0.1 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

BYW172F 数据手册

 浏览型号BYW172F的Datasheet PDF文件第2页浏览型号BYW172F的Datasheet PDF文件第3页浏览型号BYW172F的Datasheet PDF文件第4页 
BYW172D / 172F / 172G  
VISHAY  
Vishay Semiconductors  
Fast Avalanche Sinterglass Diode  
Features  
• Glass passivated junction  
• Hermetically sealed package  
• Soft recovery characteristics  
• Low reverse current  
949588  
• Low forward voltage drop  
Mechanical Data  
Case: SOD-64 Sintered glass case  
• High pulse current capability  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Applications  
Fast rectification diode in S.M.P.S  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: approx. 858 mg  
Parts Table  
Part  
Type differentiation  
Package  
BYW172D  
V
V
V
= 200 V; I  
= 300 V; I  
= 400 V; I  
= 3 A  
= 3 A  
= 3 A  
SOD-64  
SOD-64  
SOD-64  
R
R
R
FAV  
FAV  
FAV  
BYW172F  
BYW172G  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Part  
Symbol  
Value  
200  
Unit  
V
Reverse voltage = Repetitive  
peak reverse voltage  
see electrical characteristics  
BYW172D  
V
= V  
R
RRM  
BYW172F  
BYW172G  
V
V
= V  
= V  
300  
V
V
R
R
RRM  
400  
RRM  
Peak forward surge current  
Average forward current  
t = 10 ms, single half sine wave  
I
100  
3
A
p
FSM  
I
A
FAV  
Junction and storage  
temperature range  
T = T  
- 55 to + 175  
°C  
j
stg  
Non repetitive reverse  
avalanche energy  
I
= 1 A  
E
20  
mJ  
(BR)R  
R
Maximum Thermal Resistance  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Junction ambient  
l = 10 mm, T = constant  
R
R
25  
70  
K/W  
K/W  
L
thJA  
thJA  
on PC board with spacing  
25 mm  
Document Number 86096  
Rev. 1.2, 12-Aug-04  
www.vishay.com  
1

与BYW172F相关器件

型号 品牌 获取价格 描述 数据表
BYW172F-TAP VISHAY

获取价格

DIODE 3 A, 300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE
BYW172F-TR VISHAY

获取价格

DIODE 3 A, 300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE
BYW172G VISHAY

获取价格

Fast Avalanche Sinterglass Diode
BYW172G-TAP VISHAY

获取价格

DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE
BYW172G-TR VISHAY

获取价格

暂无描述
BYW178 LGE

获取价格

Fast Recovery Rectifier
BYW178 GULFSEMI

获取价格

SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: 800V CURRENT: 3.0A
BYW178 VISHAY

获取价格

Very Fast Silicon Mesa Rectifier
BYW178_10 VISHAY

获取价格

Ultra Fast Avalanche Sinterglass Diode
BYW178-TAP VISHAY

获取价格

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon,