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BYW178_10 PDF预览

BYW178_10

更新时间: 2024-01-18 08:36:17
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 110K
描述
Ultra Fast Avalanche Sinterglass Diode

BYW178_10 数据手册

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BYW178  
Vishay Semiconductors  
Ultra Fast Avalanche Sinterglass Diode  
FEATURES  
• Glass passivated junction  
• Hermetically sealed package  
• Low reverse current  
• Soft recovery characteristics  
• Very fast reverse recovery time  
• Low reverse recovery peak current  
949588  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
• Halogen-free according to IEC 61249-2-21 definition  
MECHANICAL DATA  
Case: SOD-64  
APPLICATIONS  
• Ultra fast rectification diode for switching mode power  
supplies  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 858 mg  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
R = 800 V; IFAV = 3 A  
PACKAGE  
BYW178  
V
SOD-64  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
See electrical characteristics  
tp = 10 ms, half sine wave  
PART  
SYMBOL  
VALUE  
UNIT  
Reverse voltage = repetitive peak reverse  
voltage  
BYW178  
V
R = VRRM  
800  
V
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
IFSM  
IFRM  
80  
A
A
15  
IFAV  
3
- 55 to + 175  
20  
A
Junction and storage temperature range  
Non repetitive reverse  
Tj = Tstg  
ER  
°C  
mJ  
I
(BR)R = 0.4 A  
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Junction lead  
Lead length l = 10 mm, TL = constant  
On PC board with spacing 37.5 mm  
RthJL  
25  
70  
K/W  
K/W  
Junction ambient  
RthJA  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
MIN.  
TYP.  
MAX.  
1.9  
1
UNIT  
Forward voltage  
IF = 3 A  
VF  
IR  
-
-
-
-
-
-
V
μA  
μA  
A
V
R = VRRM  
Reverse current  
VR = VRRM, Tj = 100 °C  
IF = 1 A, dIF/dt - 50 A/μs, VBatt = 200 V  
IF = 1 A, dIF/dt - 50 A/μs,  
IR  
-
20  
-
Reverse recovery current  
Reverse recovery time  
lRM  
2.2  
trr  
trr  
-
-
50  
-
-
ns  
ns  
V
Batt = 200 V, iR = 0.25 x lRM  
Reverse recovery time (JEDEC)  
IF = 0.5 A, lR = 1 A, iR = 0.25 A  
60  
Document Number: 86047  
Rev. 1.7, 04-Aug-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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