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BYW172F-TAP PDF预览

BYW172F-TAP

更新时间: 2024-02-28 06:31:55
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
4页 141K
描述
DIODE 3 A, 300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode

BYW172F-TAP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:E-LALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.65应用:FAST SOFT RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:E-LALF-W2
JESD-609代码:e2湿度敏感等级:1
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.1 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子面层:Tin/Silver (Sn/Ag)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BYW172F-TAP 数据手册

 浏览型号BYW172F-TAP的Datasheet PDF文件第2页浏览型号BYW172F-TAP的Datasheet PDF文件第3页浏览型号BYW172F-TAP的Datasheet PDF文件第4页 
BYW172D / 172F / 172G  
VISHAY  
Vishay Semiconductors  
Fast Avalanche Sinterglass Diode  
Features  
• Glass passivated junction  
• Hermetically sealed package  
• Soft recovery characteristics  
• Low reverse current  
949588  
• Low forward voltage drop  
Mechanical Data  
Case: SOD-64 Sintered glass case  
• High pulse current capability  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Applications  
Fast rectification diode in S.M.P.S  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: approx. 858 mg  
Parts Table  
Part  
Type differentiation  
Package  
BYW172D  
V
V
V
= 200 V; I  
= 300 V; I  
= 400 V; I  
= 3 A  
= 3 A  
= 3 A  
SOD-64  
SOD-64  
SOD-64  
R
R
R
FAV  
FAV  
FAV  
BYW172F  
BYW172G  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Part  
Symbol  
Value  
200  
Unit  
V
Reverse voltage = Repetitive  
peak reverse voltage  
see electrical characteristics  
BYW172D  
V
= V  
R
RRM  
BYW172F  
BYW172G  
V
V
= V  
= V  
300  
V
V
R
R
RRM  
400  
RRM  
Peak forward surge current  
Average forward current  
t = 10 ms, single half sine wave  
I
100  
3
A
p
FSM  
I
A
FAV  
Junction and storage  
temperature range  
T = T  
- 55 to + 175  
°C  
j
stg  
Non repetitive reverse  
avalanche energy  
I
= 1 A  
E
20  
mJ  
(BR)R  
R
Maximum Thermal Resistance  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Junction ambient  
l = 10 mm, T = constant  
R
R
25  
70  
K/W  
K/W  
L
thJA  
thJA  
on PC board with spacing  
25 mm  
Document Number 86096  
Rev. 1.2, 12-Aug-04  
www.vishay.com  
1

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