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BYVB32-100-HE3/45 PDF预览

BYVB32-100-HE3/45

更新时间: 2024-10-31 04:04:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 142K
描述
DIODE 9 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

BYVB32-100-HE3/45 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:unknown风险等级:5.71
Base Number Matches:1

BYVB32-100-HE3/45 数据手册

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BYV(F,B)32-50 thru BYV(F,B)32-200  
Vishay General Semiconductor  
Dual Common-Cathode Ultrafast Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Glass passivated chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
3
3
2
2
1
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
1
BYV32 Series  
BYVF32 Series  
PIN 1  
PIN 2  
CASE  
PIN 1  
PIN 2  
• Solder dip 260 °C, 40 s (for TO-220AB and  
ITO-220AB package)  
PIN 3  
PIN 3  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
2
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes,  
dc-to-dc converters, and other power switching  
application.  
1
BYVB32 Series  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
18 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
VRRM  
IFSM  
trr  
50 V to 200 V  
150 A  
25 ns  
VF  
0.85 V  
TJ max.  
150 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 125 °C  
100  
IF(AV)  
18  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
TJ, TSTG  
VAC  
150  
A
°C  
V
Operating storage and temperature range  
- 65 to + 150  
1500  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
Document Number: 88558  
Revision: 05-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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