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BYVB32-200-E3/81 PDF预览

BYVB32-200-E3/81

更新时间: 2024-11-05 06:44:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 155K
描述
Dual Common-Cathode Ultrafast Rectifier

BYVB32-200-E3/81 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.58
其他特性:FREE WHEELING DIODE应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:9 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.025 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30

BYVB32-200-E3/81 数据手册

 浏览型号BYVB32-200-E3/81的Datasheet PDF文件第2页浏览型号BYVB32-200-E3/81的Datasheet PDF文件第3页浏览型号BYVB32-200-E3/81的Datasheet PDF文件第4页浏览型号BYVB32-200-E3/81的Datasheet PDF文件第5页 
BYV(F,B)32-50 thru BYV(F,B)32-200  
Vishay General Semiconductor  
Dual Common-Cathode Ultrafast Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Glass passivated chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
3
3
2
2
1
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
1
BYV32 Series  
BYVF32 Series  
PIN 1  
PIN 2  
CASE  
PIN 1  
PIN 2  
• Solder dip 260 °C, 40 s (for TO-220AB and  
ITO-220AB package)  
PIN 3  
PIN 3  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
2
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes,  
dc-to-dc converters, and other power switching  
application.  
1
BYVB32 Series  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
18 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
VRRM  
IFSM  
trr  
50 V to 200 V  
150 A  
25 ns  
VF  
0.85 V  
TJ max.  
150 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 125 °C  
100  
IF(AV)  
18  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
TJ, TSTG  
VAC  
150  
A
°C  
V
Operating storage and temperature range  
- 65 to + 150  
1500  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
Document Number: 88558  
Revision: 05-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

BYVB32-200-E3/81 替代型号

型号 品牌 替代类型 描述 数据表
BYVB32-200HE3/45 VISHAY

完全替代

Dual Common-Cathode Ultrafast Rectifier
BYVB32-200-E3/45 VISHAY

完全替代

Dual Common-Cathode Ultrafast Rectifier

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