5秒后页面跳转
BYV96E PDF预览

BYV96E

更新时间: 2024-10-29 22:08:47
品牌 Logo 应用领域
威世 - VISHAY 整流二极管开关功效局域网
页数 文件大小 规格书
2页 55K
描述
MINIATURE GLASS PASSIVATED FAST SWITCHING RECTIFIER

BYV96E 技术参数

生命周期:Obsolete包装说明:E-LALF-W2
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:5.35Is Samacsys:N
其他特性:METALLURGICALLY BONDED应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-204APJESD-30 代码:E-LALF-W2
JESD-609代码:e0最大非重复峰值正向电流:35 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1.5 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:1000 V最大反向恢复时间:0.3 µs
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

BYV96E 数据手册

 浏览型号BYV96E的Datasheet PDF文件第2页 
BYV95 AND BYV96 SERIES  
MINIATURE GLASS PASSIVATED FAST SWITCHING RECTIFIER  
Reverse Voltage - 200 to 1000 Volts Forward Current - 1.5 Amperes  
FEATURES  
High temperature metallurgically bonded  
construction  
DO-204AP  
Hermetically sealed package  
Glass passivated cavity-free junction  
1.5 Ampere operation  
0.034 (0.86)  
0.028 (0.71)  
DIA.  
1.0 (25.4)  
MIN.  
at T =55°C with no  
A
thermal runaway  
Typical I less than 0.1µA  
R
Capable of meeting environmental standards of  
MIL-S-19500  
0.240 (6.1)  
MAX.  
Fast switching for high efficiency  
High temperature soldering guaranteed:  
350°C/10 seconds, 0.375" (9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.150 (3.8)  
0.100 (2.5)  
DIA.  
1.0 (25.4)  
MIN.  
MECHANICAL DATA  
Case: JEDEC DO-204AP solid glass body  
Terminals: Solder plated axial leads, solderable per  
MIL-STD-750, Method 2026  
Dimensions in inches and (millimeters)  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight: 0.02 ounce, 0.56 gram  
*
Brazed-lead assembly is covered by Patent No. 3,930,306  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
SYMBOLS  
VRRM  
VRMS  
VDC  
BYV95A  
200  
BYV95B  
400  
BYV95C  
600  
BYV96D  
800  
BYV96E  
1000  
700  
UNITS  
Volts  
Volts  
Volts  
Volts  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
140  
280  
420  
560  
Maximum DC blocking voltage  
200  
400  
600  
800  
1000  
1100  
Minimum avalanche breakdown voltage at 100µA  
V(BR)  
300  
500  
700  
900  
Maximum average forward rectified current  
0.375” (9.5mm) lead length at TA=55°C  
I(AV)  
IFSM  
1.5  
Amps  
Amps  
Peak forward surge current, 10ms single half sine-  
wave superimposed on rated load at TJ=165°C  
35.0  
Maximum instantaneous forward  
voltage at 1.5A  
TJ =25°C  
TJ=165°C  
1.6  
1.35  
VF  
IR(AV)  
IR  
Volts  
µA  
Maximum full load reverse current,  
full cycle average, 0.375”, (9.5mm) TJ=25°C  
lead length at  
1.0  
150.0  
TJ=165°C  
Maximum DC reverse current  
at rated DC blocking voltage  
2.0  
µA  
Maximum reverse recovery time (NOTE 1  
Typical junction capacitance (NOTE 2  
Typical thermal resistance  
)
trr  
CJ  
250  
300  
ns  
pF  
)
10.0  
)
RΘJA  
TJ  
55.0  
°C/W  
°C  
(NOTE 3  
Operating junction temperature range  
-65 to +175  
-65 to +200  
Storage temperature range  
TSTG  
°C  
NOTES: (1) Measured with IF=0.5A, IR=1.0A, Irr=0.25A  
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts  
(3) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted  
4/98  

与BYV96E相关器件

型号 品牌 获取价格 描述 数据表
BYV96E/A52R ETC

获取价格

DIODE
BYV96E-B FRONTIER

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.5A, Silicon,
BYV96EGP GULFSEMI

获取价格

SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:800 TO 1000V CURRENT: 1.5
BYV96EP FRONTIER

获取价格

1.5A FAST RECOVERY PLASTIC RECTIFIER
BYV96EP-B FRONTIER

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.5A, Silicon,
BYV96EP-T/B FRONTIER

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.5A, Silicon,
BYV96EP-T/R FRONTIER

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.5A, Silicon,
BYV96E-T/B FRONTIER

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.5A, Silicon,
BYV96ET/R PHILIPS

获取价格

Rectifier Diode, 1 Element, 1.5A, 1000V V(RRM),
BYV96E-T/R FRONTIER

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.5A, Silicon,