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BYV98-150-TAP

更新时间: 2024-10-30 19:53:23
品牌 Logo 应用领域
威世 - VISHAY 超快恢复二极管快速恢复二极管局域网
页数 文件大小 规格书
4页 111K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 150V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

BYV98-150-TAP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.75
应用:ULTRA FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:E-LALF-W2JESD-609代码:e2
湿度敏感等级:1最大非重复峰值正向电流:70 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:4 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):260
最大重复峰值反向电压:150 V最大反向电流:10 µA
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子面层:Tin/Silver (Sn/Ag)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

BYV98-150-TAP 数据手册

 浏览型号BYV98-150-TAP的Datasheet PDF文件第2页浏览型号BYV98-150-TAP的Datasheet PDF文件第3页浏览型号BYV98-150-TAP的Datasheet PDF文件第4页 
BYV98-50, BYV98-100, BYV98-150, BYV98-200  
www.vishay.com  
Vishay Semiconductors  
Ultra-Fast Avalanche Sinterglass Diode  
FEATURES  
• High reverse voltage  
• Glass passivated  
• Low reverse current  
• Low forward voltage drop  
• Hermetically sealed axial-leaded glass envelope  
• Material categorization:  
For definitions of compliance please see  
949588  
www.vishay.com/doc?99912  
MECHANICAL DATA  
APPLICATIONS  
Case: SOD-64  
• Switched mode power supplies  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
• High-frequency inverter circuits  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 858 mg  
ORDERING INFORMATION (Example)  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS  
MINIMUM ORDER QUANTITY  
BYV98-200  
BYV98-200-TR  
2500 per 10" tape and reel  
2500 per ammopack  
12 500  
12 500  
BYV98-200  
BYV98-200-TAP  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
PACKAGE  
SOD-64  
SOD-64  
SOD-64  
SOD-64  
BYV98-50  
VR = 50 V; IF(AV) = 4 A  
BYV98-100  
BYV98-150  
BYV98-200  
V
V
V
R = 100 V; IF(AV) = 4 A  
R = 150 V; IF(AV) = 4 A  
R = 200 V; IF(AV) = 4 A  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
See electrical characteristics  
tp = 10 ms, half sine wave  
PART  
SYMBOL  
VALUE  
UNIT  
V
BYV98-50  
BYV98-100  
BYV98-150  
BYV98-200  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
IFSM  
50  
100  
V
Reverse voltage = repetitive peak reverse  
voltage  
150  
V
200  
V
Peak forward surge current  
70  
A
Average forward current  
T
amb = 30 °C, l = 10 mm  
IF(AV)  
4
- 55 to + 175  
20  
A
Junction and storage temperature range  
Non repetitive reverse avalanche energy  
Tj = Tstg  
ER  
°C  
mJ  
l(BR)R = 1 A  
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
25  
UNIT  
Junction ambient  
Lead length l = 10 mm, TL = constant  
RthJA  
K/W  
Rev. 1.8, 11-Sep-12  
Document Number: 86046  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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