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BYV38-TR PDF预览

BYV38-TR

更新时间: 2024-11-25 12:31:31
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网软恢复二极管快速软恢复二极管
页数 文件大小 规格书
4页 123K
描述
Fast Avalanche Sinterglass Diode

BYV38-TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:12 weeks风险等级:1.66
Is Samacsys:N应用:FAST SOFT RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:E-LALF-W2
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:1000 V
最大反向恢复时间:0.3 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BYV38-TR 数据手册

 浏览型号BYV38-TR的Datasheet PDF文件第2页浏览型号BYV38-TR的Datasheet PDF文件第3页浏览型号BYV38-TR的Datasheet PDF文件第4页 
BYV37, BYV38  
Vishay Semiconductors  
www.vishay.com  
Fast Avalanche Sinterglass Diode  
FEATURES  
• Glass passivated junction  
• Hermetically sealed package  
• Low reverse current  
• Soft recovery characteristics  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
949539  
APPLICATIONS  
• Fast “soft recovery” rectification diode  
MECHANICAL DATA  
Case: SOD-57  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 369 mg  
ORDERING INFORMATION (Example)  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS  
MINIMUM ORDER QUANTITY  
BYV38  
BYV38-TR  
5000 per 10" tape and reel  
5000 per ammopack  
25 000  
25 000  
BYV38  
BYV38-TAP  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
PACKAGE  
SOD-57  
BYV37  
V
R = 800 V; IF(AV) = 2 A  
BYV38  
V
R = 1000 V; IF(AV) = 2 A  
SOD-57  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
See electrical characteristics  
tp = 10 ms, half sine wave  
PART  
BYV37  
BYV38  
SYMBOL  
VALUE  
UNIT  
V
V
R = VRRM  
R = VRRM  
IFSM  
800  
Reverse voltage  
V
1000  
V
Peak forward surge current  
50  
A
Average forward current  
IF(AV)  
2
10  
A
Non repetitive reverse avalanche energy  
Junction and storage temperature range  
I(BR)R = 0.4 A  
ER  
mJ  
°C  
Tj = Tstg  
- 55 to + 175  
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Lead length l = 10 mm, TL = constant  
On PC board with spacing 25 mm  
RthJA  
45  
K/W  
K/W  
Junction ambient  
RthJA  
100  
Rev. 1.8, 04-Sep-12  
Document Number: 86045  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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