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BYV40-150 PDF预览

BYV40-150

更新时间: 2024-02-18 12:09:20
品牌 Logo 应用领域
飞利浦 - PHILIPS 非常快速的恢复二极管快速恢复二极管光电二极管
页数 文件大小 规格书
6页 34K
描述
Rectifier Diode, 1.3A, 150V V(RRM),

BYV40-150 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.84
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-609代码:e0最大非重复峰值正向电流:6 A
最高工作温度:150 °C最大输出电流:1.3 A
最大重复峰值反向电压:150 V最大反向恢复时间:0.025 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

BYV40-150 数据手册

 浏览型号BYV40-150的Datasheet PDF文件第2页浏览型号BYV40-150的Datasheet PDF文件第3页浏览型号BYV40-150的Datasheet PDF文件第4页浏览型号BYV40-150的Datasheet PDF文件第5页浏览型号BYV40-150的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast  
BYV40 series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated high efficiency dual  
rectifier diodes in a plastic envelope  
suitable for surface mounting,  
featuring low forward voltage drop,  
ultra-fast recovery times and soft  
recovery characteristic. They are  
intended for use in switched mode  
power supplies and high frequency  
circuits in general where low  
conduction and switching losses are  
essential.  
SYMBOL  
PARAMETER  
MAX. MAX. MAX. UNIT  
BYV40-  
100  
100  
150  
150  
200  
200  
VRRM  
Repetitive peak reverse  
voltage  
Forward voltage  
Output current (both  
diodes conducting)  
Reverse recovery time  
V
VF  
IO(AV)  
0.7  
1.5  
0.7  
1.5  
0.7  
1.5  
V
A
trr  
25  
25  
25  
ns  
PINNING - SOT223  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
anode 1 (a)  
4
a1  
1
a2  
3
2
cathode (k)  
anode 2 (a)  
cathode (k)  
3
k
2
4
2
3
1
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
-100  
100  
100  
100  
-150  
150  
150  
150  
-200  
200  
200  
200  
VRRM  
VRWM  
VR  
Repetitive peak reverse voltage  
-
-
-
V
V
V
Crest working reverse voltage  
Continuous reverse voltage1  
IO(AV)  
Output current (both diodes  
conducting)2  
square wave; δ = 0.5;  
-
-
1.5  
A
A
T
sp 132˚C  
sinusoidal; a = 1.57;  
sp 134˚C  
1.35  
T
IO(RMS)  
IFRM  
RMS forward current  
-
-
2.1  
1.5  
A
A
Repetitive peak forward current t = 25 µs; δ = 0.5;  
per diode  
Tsp 132 ˚C  
IFSM  
Non-repetitive peak forward  
current per diode  
tp = 10 ms  
-
-
6
6.6  
A
A
tp = 8.3 ms  
sinusoidal; Tj = 150˚C prior  
to surge; with reapplied  
VRWM(max)  
I2t  
Tstg  
Tj  
I2t for fusing  
Storage temperature  
Operating junction temperature  
t = 10 ms  
-
-65  
-
0.18  
150  
150  
A2s  
˚C  
˚C  
1 Tsp 120˚C for thermal stability.  
2 Neglecting switching and reverse current losses  
August 1996  
1
Rev 1.200  

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