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BYQ28EF-200HE3

更新时间： 2024-11-12 00:59:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 157K
描述
Dual Common Cathode Ultrafast Rectifier

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BYQ28EF-200HE3 数据手册

 浏览型号BYQ28EF-200HE3的Datasheet PDF文件第2页浏览型号BYQ28EF-200HE3的Datasheet PDF文件第3页浏览型号BYQ28EF-200HE3的Datasheet PDF文件第4页浏览型号BYQ28EF-200HE3的Datasheet PDF文件第5页 
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Ultrafast Rectifier  
FEATURES  
• Power pack  
TO-220AB  
ITO-220AB  
Available  
• Glass passivated pellet chip junction  
• Ultrafast recovery times  
• Soft recovery characteristics  
• Low switching losses, high efficiency  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 245 °C (for TO-263AB  
package)  
3
3
2
2
1
1
BYQ28E, UG10  
BYQ28EF, UGF10  
PIN 1  
PIN 1  
PIN 2  
PIN 2  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
(for TO-220AB and ITO-220AB package)  
CASE  
PIN 3  
PIN 3  
• AEC-Q101 qualified  
TO-263AB  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
K
2
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of switching  
power supplies, freewheeling diodes, DC/DC converters  
and polarity protection application.  
1
BYQ28EB, UGB10  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, automotive grade  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 5.0 A  
VRRM  
IFSM  
trr  
100 V to 200 V  
55 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
25 ns  
VF  
0.895 V  
150 °C  
meets JESD 201 class 2 whisker test  
TJ max.  
Polarity: As marked  
TO-220AB, ITO-220AB,  
TO-263AB  
Package  
Mounting Torque: 10 in-lbs max.  
Diode variations  
Common cathode  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
UG10BCT  
UG10CCT  
UG10DCT  
PARAMETER  
SYMBOL  
UNIT  
BYQ28E-100 BYQ28E-150 BYQ28E-200  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
100  
100  
100  
150  
150  
150  
10  
200  
200  
200  
V
V
V
Maximum DC blocking voltage  
total device  
per diode  
Maximum average forward rectified current at TC = 100 °C  
IF(AV)  
A
5.0  
Peak forward surge current 8.3 ms single half sine-wave  
IFSM  
IRSM  
VC  
55  
0.2  
8
A
A
superimposed on rated load per diode  
Non-repetitive peak reverse current per diode at tp = 100 μs  
Electrostatic discharge capacitor voltage,  
human body model: C = 250 pF, R = 1.5 k  
kV  
Operating junction and storage temperature range  
TJ, TSTG  
VAC  
-40 to +150  
1500  
°C  
V
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min  
Revision: 23-Feb-16  
Document Number: 88549  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

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