BYP25K3

更新时间： 2024-02-27 15:46:33

品牌	Logo	应用领域
德欧泰克 - DIOTEC		二极管
页数	文件大小	规格书
2页	193K
描述
Silicon Press-Fit-Diodes High-temperature diodes

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中文翻译

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数据手册

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BYP25K3 数据手册

BYP 25A05 ... BYP 25A6

BYP 25K05 ... BYP 25K6

Silicon Press-Fit-Diodes

High-temperature diodes

Silizium-Einpreßdioden

Hochtemperaturdioden

Ø 12.75

Ø 11 ^±0.1

Nominal current – Nennstrom

25 A

Repetitive peak reverse voltage

Periodische Spitzensperrspannung

50…600 V

Metal press-fit case with plastic cover

Metall-Einpreßgehäuse mit Plastik-Abdeckung

1.3

Weight approx. – Gewicht ca.

10 g

Casting compound has UL classification 94V-0

Vergußmasse UL94V-0 klassifiziert

Ø 13^±01

Standard packaging: bulk

Standard Lieferform: lose im Karton

Dimensions / Maße in mm

Maximum ratings

Grenzwerte

Type / Typ

Wire to / Draht an

Repetitive peak reverse voltage Surge peak reverse voltage

Periodische Spitzensperrspanng. Stoßspitzensperrspannung

Anode

Cathode

V_RRM[V]

V_RSM[V]

BYP 25A05

BYP 25A1

BYP 25A2

BYP 25A3

BYP 25A4

BYP 25A6

BYP 25K05

BYP 25K1

BYP 25K2

BYP 25K3

BYP 25K4

BYP 25K6

100

200

300

400

600

120

240

360

480

700

Max. average forward rectified current, R-load

Dauergrenzstrom in Einwegschaltung mit R-Last

T_C= 150ꢀC

f > 15 Hz

T_A= 25ꢀC

I_FAV

25 A

90 A ¹)

Repetitive peak forward current

Periodischer Spitzenstrom

I_FRM

Peak forward surge current, 50 / 60 Hz half sine-wave

Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle

I_FSM

270 / 300 A

Rating for fusing – Grenzlastintegral, t <10 ms

i²t

T_j

375 A²s

Operating junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

– 50...+215 ꢀC

T_S– 50...+215 ꢀC

Maximum pressure – Maximaler Einpreßdruck

7 kN

)

Max. case temperature T_C= 150ꢀC – Max. Gehäusetemperatur T_C= 150ꢀC

28.02.2002

中文翻译

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