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BYP25K3 PDF预览

BYP25K3

更新时间: 2024-11-10 22:28:03
品牌 Logo 应用领域
德欧泰克 - DIOTEC 二极管
页数 文件大小 规格书
2页 193K
描述
Silicon Press-Fit-Diodes High-temperature diodes

BYP25K3 数据手册

 浏览型号BYP25K3的Datasheet PDF文件第2页 
BYP 25A05 ... BYP 25A6  
BYP 25K05 ... BYP 25K6  
Silicon Press-Fit-Diodes  
High-temperature diodes  
Silizium-Einpreßdioden  
Hochtemperaturdioden  
Ø 12.75  
Ø 11 ±0.1  
Nominal current – Nennstrom  
25 A  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
50…600 V  
Metal press-fit case with plastic cover  
Metall-Einpreßgehäuse mit Plastik-Abdeckung  
1.3  
Weight approx. – Gewicht ca.  
10 g  
Casting compound has UL classification 94V-0  
Vergußmasse UL94V-0 klassifiziert  
Ø 13±01  
Standard packaging: bulk  
Standard Lieferform: lose im Karton  
Dimensions / Maße in mm  
Maximum ratings  
Grenzwerte  
Type / Typ  
Wire to / Draht an  
Repetitive peak reverse voltage Surge peak reverse voltage  
Periodische Spitzensperrspanng. Stoßspitzensperrspannung  
Anode  
Cathode  
VRRM [V]  
VRSM [V]  
BYP 25A05  
BYP 25A1  
BYP 25A2  
BYP 25A3  
BYP 25A4  
BYP 25A6  
BYP 25K05  
BYP 25K1  
BYP 25K2  
BYP 25K3  
BYP 25K4  
BYP 25K6  
50  
60  
100  
200  
300  
400  
600  
120  
240  
360  
480  
700  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TC = 150C  
f > 15 Hz  
TA = 25C  
TA = 25C  
IFAV  
25 A  
90 A 1)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
IFRM  
Peak forward surge current, 50 / 60 Hz half sine-wave  
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle  
IFSM  
270 / 300 A  
Rating for fusing – Grenzlastintegral, t <10 ms  
i2t  
Tj  
375 A2s  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
– 50...+215 C  
TS – 50...+215 C  
Maximum pressure – Maximaler Einpreßdruck  
7 kN  
1
)
Max. case temperature TC = 150C – Max. Gehäusetemperatur TC = 150C  
76  
28.02.2002  

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