Datasheet > BYP35A6

BYP35A6

更新时间： 2024-11-10 22:09:11

品牌	Logo	应用领域
德欧泰克 - DIOTEC		二极管
页数	文件大小	规格书
2页	183K
描述
Silicon Press-Fit-Diodes

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中文翻译

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数据手册
替代型号

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BYP35A6 数据手册

BYP 35A05 ... BYP 35A6

BYP 35K05 ... BYP 35K6

Silicon Press-Fit-Diodes

High-temperature diodes

Silizium-Einpreßdioden

Hochtemperaturdioden

Nominal current – Nennstrom

35 A

Repetitive peak reverse voltage

Periodische Spitzensperrspannung

50…600 V

Metal press-fit case with plastic cover

Metall-Einpreßgehäuse mit Plastik-Abdeckung

Weight approx. – Gewicht ca.

10 g

Casting compound has UL classification 94V-0

Vergußmasse UL94V-0 klassifiziert

Standard packaging: bulk

Standard Lieferform: lose im Karton

Dimensions / Maße in mm

Maximum ratings

Grenzwerte

Type / Typ

Wire to / Draht an

Repetitive peak reverse voltage Surge peak reverse voltage

Periodische Spitzensperrspanng. Stoßspitzensperrspannung

Anode

Cathode

V_RRM[V]

V_RSM[V]

BYP 35A05

BYP 35A1

BYP 35A2

BYP 35A3

BYP 35A4

BYP 35A6

BYP 35K05

BYP 35K1

BYP 35K2

BYP 35K3

BYP 35K4

BYP 35K6

100

200

300

400

600

120

240

360

480

700

Max. average forward rectified current, R-load

Dauergrenzstrom in Einwegschaltung mit R-Last

T_C= 150ꢀC

f > 15 Hz

T_A= 25ꢀC

I_FAV

35 A

110 A ¹)

Repetitive peak forward current

Periodischer Spitzenstrom

I_FRM

Peak forward surge current, 50 / 60 Hz half sine-wave

Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle

I_FSM

360 / 400 A

Rating for fusing – Grenzlastintegral, t <10 ms

i²t

T_j

660 A²s

Operating junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

– 50...+215 ꢀC

T_S– 50...+215 ꢀC

Maximum pressure – Maximaler Einpreßdruck

7 kN

)

Max. case temperature T_C= 150ꢀC – Max. Gehäusetemperatur T_C= 150ꢀC

28.02.2002

中文翻译

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BYP35A6 替代型号

型号	品牌	替代类型	描述	数据表
KYW35A6	SEMIKRON	功能相似	Silicon Press-Fit-Diodes

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