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BYD13GGPHE3/54 PDF预览

BYD13GGPHE3/54

更新时间： 2024-11-13 14:32:59
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 80K
描述
Rectifier Diode, Avalanche, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

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BYD13GGPHE3/54 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DO-41
包装说明：O-PALF-W2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80Factory Lead Time：20 weeks 1 day
风险等级：5.76其他特性：FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-204ALJESD-30 代码：O-PALF-W2
JESD-609代码：e3元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：400 V
最大反向恢复时间：3 µs表面贴装：NO
技术：AVALANCHE端子面层：MATTE TIN
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

BYD13GGPHE3/54 数据手册

 浏览型号BYD13GGPHE3/54的Datasheet PDF文件第2页浏览型号BYD13GGPHE3/54的Datasheet PDF文件第3页浏览型号BYD13GGPHE3/54的Datasheet PDF文件第4页 
New Product  
BYD13DGP thru BYD13MGP  
Vishay General Semiconductor  
Avalanche Glass Passivated Junction Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
• Cavity-free glass-passivated junction  
SUPERECTIFIER®  
• Avalanche surge capability guaranteed  
• Low forward voltage drop  
• Low leakage current, typical IR less than 0.1 μA  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
DO-204AL (DO-41)  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in general purpose rectification of power supply,  
inverters, converters and freewheeling applications for  
consumer, automotive, and telecommunication.  
IF(AV)  
VRRM  
IFSM  
1.0 A  
200 V to 1000 V  
30 A  
MECHANICAL DATA  
ERSM  
VF  
7 mJ  
Case: DO-204AL, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
1.1 V, 1.2 V  
5.0 μA  
IR  
TJ max.  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL BYD13DGP BYD13GGP BYD13JGP BYD13KGP BYD13MGP UNIT  
Device marking code  
13DGP  
200  
13GGP  
400  
13JGP  
600  
13KGP  
800  
13MGP  
1000  
Maximum repetitive peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VDC  
V
V
200  
400  
600  
800  
1000  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length (fig. 1)  
IF(AV)  
IFSM  
1.0  
30  
7
A
A
Peak forward surge current 8.3 ms single  
half sine-wave superimposed on rated load  
Non-repetitive peak reverse avalanche energy  
at L = 120 mH, TJ = TJ maximum prior to surge  
ERSM  
mJ  
Maximum full load reverse current,  
full cycle average, 0.375" (9.5 mm)  
lead lengths at TA = 75 °C  
IR(AV)  
30  
μA  
°C  
Operating junction and storage  
temperature range  
TJ, TSTG  
- 65 to + 175  
Document Number: 88913  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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