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BYD13KT/R PDF预览

BYD13KT/R

更新时间: 2024-11-13 19:48:59
品牌 Logo 应用领域
恩智浦 - NXP 局域网二极管
页数 文件大小 规格书
7页 44K
描述
DIODE SILICON, SIGNAL DIODE, HERMETICALLY SEALED, GLASS PACKAGE-2, Signal Diode

BYD13KT/R 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

BYD13KT/R 数据手册

 浏览型号BYD13KT/R的Datasheet PDF文件第2页浏览型号BYD13KT/R的Datasheet PDF文件第3页浏览型号BYD13KT/R的Datasheet PDF文件第4页浏览型号BYD13KT/R的Datasheet PDF文件第5页浏览型号BYD13KT/R的Datasheet PDF文件第6页浏览型号BYD13KT/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BYD13 series  
Controlled avalanche rectifiers  
1996 May 24  
Product specification  
Supersedes data of April 1992  

与BYD13KT/R相关器件

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BYD13M NXP

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BYD13M EIC

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CONTROLLED AVALANCHE RECTIFIER DIODES
BYD13M TAYCHIPST

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Controlled avalanche rectifiers
BYD13M/A52R ETC

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DIODE CONTROLLED AVALANCHE
BYD13MGP VISHAY

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Rectifier Diode, Avalanche, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41
BYD13MGP-E3 VISHAY

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Rectifier Diode, Avalanche, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, LEAD FREE, PLA
BYD13MGP-E3/54 VISHAY

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Rectifier Diode, Avalanche, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT
BYD13MGP-E3/73 VISHAY

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Rectifier Diode, Avalanche, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT
BYD13MGP-HE3 VISHAY

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DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Sign
BYD13MGPHE3/73 VISHAY

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Rectifier Diode, Avalanche, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT