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BYD13JT/R PDF预览

BYD13JT/R

更新时间: 2024-11-13 19:48:59
品牌 Logo 应用领域
恩智浦 - NXP 局域网二极管
页数 文件大小 规格书
7页 44K
描述
DIODE 0.75 A, 600 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

BYD13JT/R 技术参数

生命周期:Active包装说明:O-LALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-LALF-W2
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:0.75 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:3 µs表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

BYD13JT/R 数据手册

 浏览型号BYD13JT/R的Datasheet PDF文件第2页浏览型号BYD13JT/R的Datasheet PDF文件第3页浏览型号BYD13JT/R的Datasheet PDF文件第4页浏览型号BYD13JT/R的Datasheet PDF文件第5页浏览型号BYD13JT/R的Datasheet PDF文件第6页浏览型号BYD13JT/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BYD13 series  
Controlled avalanche rectifiers  
1996 May 24  
Product specification  
Supersedes data of April 1992  

与BYD13JT/R相关器件

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BYD13K NXP

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Controlled avalanche rectifiers
BYD13K TAYCHIPST

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Controlled avalanche rectifiers
BYD13K EIC

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CONTROLLED AVALANCHE RECTIFIER DIODES
BYD13KGP VISHAY

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Rectifier Diode, Avalanche, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
BYD13KGP-E3 VISHAY

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Rectifier Diode, Avalanche, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, LEAD FREE, PLAS
BYD13KGP-E3/54 VISHAY

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Rectifier Diode, Avalanche, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT,
BYD13KGP-E3/73 VISHAY

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Rectifier Diode, Avalanche, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT,
BYD13KGP-HE3 VISHAY

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DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signa
BYD13KGP-HE3/54 VISHAY

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1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
BYD13KGP-HE3/73 VISHAY

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1A, 800V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN