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BY329_SERIES

更新时间: 2024-01-07 12:01:15
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其他 - ETC /
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6页 53K
描述

BY329_SERIES 技术参数

生命周期:Active包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
应用:FAST RECOVERY POWER配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSFM-T3元件数量:1
相数:1端子数量:3
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向恢复时间:0.135 µs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE

BY329_SERIES 数据手册

 浏览型号BY329_SERIES的Datasheet PDF文件第2页浏览型号BY329_SERIES的Datasheet PDF文件第3页浏览型号BY329_SERIES的Datasheet PDF文件第4页浏览型号BY329_SERIES的Datasheet PDF文件第5页浏览型号BY329_SERIES的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
fast, soft-recovery  
BY329 series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
VR = 800 V/ 1000 V/ 1200 V  
IF(AV) = 8 A  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• High thermal cycling performance  
• Low thermal resistance  
k
1
a
2
IFSM 75 A  
trr 135 ns  
GENERAL DESCRIPTION  
PINNING  
SOD59 (TO220AC)  
Glass-passivated double diffused  
rectifier diodes featuring low  
forward voltage drop, fast reverse  
recovery and soft recovery  
characteristic. The devices are  
intended for use in TV receivers,  
monitors and switchedmode power  
supplies.  
PIN  
DESCRIPTION  
cathode  
anode  
cathode  
tab  
1
2
tab  
1
2
The BY329 series is supplied in the  
conventional  
leaded  
SOD59  
(TO220AC) package.  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
BY329  
-800 -1000 -1200  
VRSM  
Peak non-repetitive reverse  
-
800  
1000 1200  
V
voltage  
VRRM  
VRWM  
Peak repetitive reverse voltage  
Crest working reverse voltage  
Average forward current1  
-
-
800  
600  
1000 1200  
800  
8
V
V
1000  
IF(AV)  
square wave; δ = 0.5;  
mb 122 ˚C  
sinusoidal; a = 1.57;  
mb 125 ˚C  
-
-
A
A
T
7
T
IF(RMS)  
IFRM  
RMS forward current  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
-
11  
16  
A
A
T
mb 122 ˚C  
IFSM  
Non-repetitive peak forward  
current.  
t = 10 ms  
-
-
75  
82  
A
A
t = 8.3 ms  
sinusoidal; Tj = 150 ˚C prior  
to surge; with reapplied  
VRWM(max)  
I2t  
Tstg  
Tj  
I2t for fusing  
Storage temperature  
Operating junction temperature  
t = 10 ms  
-
-40  
-
28  
150  
150  
A2s  
˚C  
˚C  
1 Neglecting switching and reverse current losses.  
September 1998  
1
Rev 1.200  

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