BY329-1500S

更新时间： 2024-02-08 07:34:07

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
5页	39K
描述
Damper diode fast, high-voltage

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BY329-1500S 数据手册

Philips Semiconductors

Product specification

Damper diode

fast, high-voltage

BY329-1500, BY329-1500S

FEATURES

SYMBOL

QUICK REFERENCE DATA

V_R= 1500 V

• Low forward volt drop

• Fast switching

• Soft recovery characteristic

• High thermal cycling performance

• Low thermal resistance

V_F≤ 1.35 V / 1.5 V

I_F(peak)= 6 A (f = 16 kHz)

_F(peak)= 6 A (f = 70 kHz)

_FSM≤ 75 A

t_rr≤ 230 ns / 160 ns

GENERAL DESCRIPTION

PINNING

SOD59 (TO220AC)

Glass-passivated double diffused

rectifier diode featuring low forward

voltage drop, fast reverse recovery

and soft recovery characteristic.

The device is intended for use in TV

receivers and PC monitors.

DESCRIPTION

cathode

anode

cathode

tab

The BY329 series is supplied in the

conventional

leaded

SOD59

(TO220AC) package.

LIMITING VALUES

Limiting values accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

V_RSM

V_RRM

V_RWM

Peak non-repetitive peak

1500

reverse voltage

Peak repetitive reverse

voltage

Crest working reverse voltage

1500

1300

BY329

-1500

-1500S

I_F(peak)

Peak working forward current f = 16 kHz

f = 70 kHz

I_FRM

I_F(RMS)

Peak repetitive forward

current

RMS forward current

Peak non-repetitive forward

current

t = 25 µs; δ = 0.5;

_mb≤ 123 ˚C

I_FSM

t = 10 ms

sinusoidal; T_j= 150 ˚C prior to

surge; with reapplied V_RWM(max)

T_stg

T_j

Storage temperature

Operating junction

temperature

-40

150

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction to

mounting base

Thermal resistance junction to in free air

ambient

2.0

K/W

September 1998

Rev 1.100

12 3 4 5

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