Datasheet > BY329X-1000

BY329X-1000

更新时间： 2024-11-07 22:10:31

品牌	Logo	应用领域
恩智浦 - NXP		整流二极管
页数	文件大小	规格书
7页	60K
描述
Rectifier diodes fast, soft-recovery

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数据手册

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BY329X-1000 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

fast, soft-recovery

BY329F, BY329X series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

V_R= 800 V/ 1000 V/ 1200 V

• Soft recovery characteristic

• High thermal cycling performance

• Isolated mounting tab

I_F(AV)= 8 A

I_FSM≤ 65 A

t_rr≤ 145 ns

GENERAL DESCRIPTION

Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft

recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies.

The BY329F series is supplied in the conventional leaded SOD100 package.

The BY329X series is supplied in the conventional leaded SOD113 package.

PINNING

SOD100

SOD113

DESCRIPTION

cathode

anode

isolated

case

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS

BY329F / BY329X

MIN.

MAX.

UNIT

-800 -1000 -1200

V_RSM

Peak non-repetitive reverse

800

1000 1200

voltage

V_RRM

V_RWM

Peak repetitive reverse voltage

Crest working reverse voltage

800

600

1000 1200

800

1000

I_F(AV)

Average forward current¹

square wave; δ = 0.5;

_hs≤ 83 ˚C

sinusoidal; a = 1.57;

_hs≤ 90 ˚C

I_F(RMS)

I_FRM

RMS forward current

Peak repetitive forward current t = 25 µs; δ = 0.5;

_hs≤ 83 ˚C

I_FSM

Peak non-repetitive forward

current.

t = 10 ms

t = 8.3 ms

sinusoidal; T_j= 150 ˚C prior

to surge; with reapplied

V_RWM(max)

I²t

T_stg

T_j

I²t for fusing

Storage temperature

Operating junction temperature

t = 10 ms

-40

150

A²s

˚C

1. Neglecting switching and reverse current losses.

September 1998

Rev 1.100

12 3 4 5 6 7

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