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BY329X

更新时间: 2024-11-07 22:10:31
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管
页数 文件大小 规格书
6页 53K
描述
Rectifier diodes fast, soft-recovery

BY329X 技术参数

生命周期:Active包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
应用:FAST RECOVERY POWER配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSFM-T3元件数量:1
相数:1端子数量:3
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向恢复时间:0.135 µs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE

BY329X 数据手册

 浏览型号BY329X的Datasheet PDF文件第2页浏览型号BY329X的Datasheet PDF文件第3页浏览型号BY329X的Datasheet PDF文件第4页浏览型号BY329X的Datasheet PDF文件第5页浏览型号BY329X的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
fast, soft-recovery  
BY329X series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass-passivated double diffused  
rectifier diodes in a full pack plastic  
envelope featuring low forward  
voltage drop, fast reverse recovery  
and soft recovery characteristic. The  
devices are intended for use in TV  
receivers, monitors and switched  
mode power supplies.  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
-800 -1000 -1200  
BY329X  
VRRM  
Repetitive peak reverse  
800 1000 1200  
V
voltage  
IF(AV)  
IFSM  
Average forward current  
Non-repetitive peak  
forward current  
8
65  
8
65  
8
65  
A
A
trr  
Reverse recovery time  
145  
145  
145  
ns  
PINNING - SOD113  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
cathode  
anode  
case  
k
1
a
2
2
case isolated  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
-800 -1000 -1200  
VRSM  
Non-repetitive peak reverse  
-
800  
1000 1200  
V
voltage  
VRRM  
VRWM  
Repetitive peak reverse voltage  
Crest working reverse voltage  
Average forward current1  
-
-
800  
600  
1000 1200  
800  
8
V
V
1000  
IF(AV)  
square wave; δ = 0.5;  
-
A
T
hs 83 ˚C  
sinusoidal; a = 1.57;  
hs 90 ˚C  
-
7
A
T
IF(RMS)  
IFRM  
RMS forward current  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
-
11  
16  
A
A
T
hs 83 ˚C  
IFSM  
Non-repetitive peak forward  
current.  
t = 10 ms  
-
-
65  
71  
A
A
t = 8.3 ms  
sinusoidal; Tj = 150 ˚C prior  
to surge; with reapplied  
VRWM(max)  
I2t  
Tstg  
Tj  
I2t for fusing  
Storage temperature  
Operating junction temperature  
t = 10 ms  
-
-40  
-
28  
150  
150  
A2s  
˚C  
˚C  
1 Neglecting switching and reverse current losses.  
May 1995  
1
Rev 1.000  

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