Datasheet > BV1LB300FJ-C

BV1LB300FJ-C

更新时间： 2024-11-30 01:21:11

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
21页	1038K
描述
1ch Low Side Switch IC

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中文翻译

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数据手册

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BV1LB300FJ-C 数据手册

Datasheet

Automotive IPD Series

1ch Low Side Switch IC

BV1LB300FJ-C

Features

Product Summary

■ Built-in overcurrent limiting circuit(OCP)

■ Built-in thermal shutdown circuit(TSD)

■ Built-in active clamp circuit

■ Direct control enabled from CMOS logic IC, etc.

■ On-state resistance R_ON=300mΩ(Typ)

(when V_IN5V, I_D=0.5A, Tj25C)

On-state resistance (T_j=25°C, Typ)

Overcurrent limit (T_j=25°C, Typ)

Output clamp voltage (Min)

300mΩ

2.7A

42V

Active clamp energy (T_j=25°C)

150mJ

■ Monolithic power management IC with the control

block (CMOS) and power MOS FET mounted on a

single chip

(Note1)

■ AEC-Q100 Qualified

(Note 1) Grade1

Package

SOP-J8

W(Typ) x D(Typ) x H(Max)

4.90mm x 6.00mm x 1.65mm

General Description

The BV1LB300FJ-C is an automotive 1ch low side

switch IC, which has built-in overcurrent limiting circuit,

thermal shutdown circuit, and overvoltage (active clamp)

protection circuit.

Applications

1ch low side switch for driving resistive, Inductive load, Capacitive load

Block Diagram

○Product structure: Silicon monolithic integrated circuit

www.rohm.co.jp

TSZ22111・14・001

This product is not designed to protect it from radiation.

TSZ02201-0G3G0BD00110-1-2

28.Mar.2016 Rev.001

1/17

12 3 4 5 6 7...21

中文翻译

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