Datasheet
Automotive IPD 1ch Low Side Switch
with Output Diagnostic Function
BV1LD160EFJ-C
Features
Key Specifications
■ Built-in Dual TSD*1
On-state Resistance (Tj = 25 °C, Typ)
Over Current Limitation Level
(Tj = 25 °C, Typ)
Output Clamp Voltage (Min)
Active Clamp Energy (Tj(START) = 25 °C)
160 mΩ
■ AEC-Q100 Qualified*2
■ Built-in Over Current Protection Function(OCP)
■ Built-in Active Clamp Function
■ Direct Control Enabled from CMOS Logic IC, etc.
■ On Resistance RDS(ON) = 160 mΩ (Typ)
(when VIN = 5 V, IOUT = 1.0 A, Tj = 25 C)
■ Monolithic Power Management IC with the
Control Block (CMOS) and Power MOS FET
Mounted on a Single Chip
3.6 A
40 V
90 mJ
Package
HTSOP-J8
W (Typ) x D (Typ) x H (Max)
4.9 mm x 6.0 mm x 1.0 mm
*1 This IC has thermal shutdown (Junction temperature detect)
and ΔTj Protection (Power-MOS steep temperature rising
detect).
*2 Grade1
General Description
BV1LD160EFJ-C is 1ch low side switch IC for 12 V
automotive applications. It has built-in OCP, Dual
TSD and Active Clamp function. It is equipped with
output diagnostic function for TSD.
Application
■ Driving Resistive, Inductive and Capacitive Load
Block Diagram
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays.
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