Datasheet > BV1LY010FPJ-M

BV1LY010FPJ-M

更新时间： 2024-03-03 10:09:39

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
25页	1132K
描述
The BV1LY010FPJ-M is an automotive 1ch low side switch IC, which has built-in Dual TSD^®, OCP and active clamp function.

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BV1LY010FPJ-M 数据手册

Datasheet

Automotive IPD 1ch Low Side Switch

BV1LY010FPJ-M

Features

Key Specifications

■

Dual TSD^{® (Note 1)}

On-state Resistance (Tj = 25 °C, Typ)

Over Current Detection Current

(Tj = 25 °C, Typ)

10 mΩ

AEC-Q100 Qualifies^{(Note 2)}

Built-in Over Current Protection Function (OCP)

Built-in Active Clamp Function

Direct Control Enabled from CMOS Logic IC, etc.

On Resistance R_DS(ON)= 10 mΩ (Typ)

(when V_IN= 5 V, I_OUT= 2.4 A, Tj = 25 C)

Monolithic Power Management IC with the Control

Block (CMOS) and Power MOS FET Mounted on a

Single Chip

67 A

Output Clamp Voltage (Min)

Active Clamp Energy (Tj_(START)= 25 °C)

38 V

230 mJ

■

Package

TO252-J3

W (Typ) x D (Typ) x H (Max)

6.6 mm x 10.1mm x 2.5 mm

(Note 1) This IC has thermal shutdown (Junction temperature detect) and

ΔTj Protection (Power-MOS steep temperature rising detect).

(Note 2) Grade1

General Description

The BV1LY010FPJ-M is an automotive 1ch low side

switch IC, which has built-in Dual TSD^®, OCP and active

clamp function.

Application

■

Driving Resistive, Inductive and Capacitive Load

Block Diagram

OUT

Active Clamp Circuit

Dual TSD^®

OCP

GND

Figure 1. Block Diagram

“Dual TSD^®” is a registered trademark of ROHM Co., Ltd

 Product structure : Silicon integrated circuit  This product has no designed protection against radioactive rays.

www.rohm.com

TSZ02201-0GYG1G400360-1-2

01.Sep.2023 Rev.001

1/22

TSZ22111 • 14 • 001

12 3 4 5 6 7...25

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