Datasheet > BV1LE160EFJ-C

BV1LE160EFJ-C

更新时间： 2023-09-03 20:25:12

品牌	Logo	应用领域
罗姆 - ROHM		开关
页数	文件大小	规格书
28页	2188K
描述
BV1LE160EFJ-C是一款适用于车载12V应用的单通道低边开关。产品内置OCP、DualTSD及有源钳位功能，利用其诊断功能可以进行TSD诊断。

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BV1LE160EFJ-C 数据手册

Datasheet

Automotive IPD 1ch Low Side Switch

with Output Diagnostic Function

BV1LE160EFJ-C

Features

Key Specifications

■ Built-in Dual TSD^*1

On-state Resistance (Tj = 25 °C, Typ)

Over Current Limitation Level

(Tj = 25 °C, Typ)

Output Clamp Voltage (Min)

Active Clamp Energy (Tj_(START)= 25 °C)

160 mΩ

■ AEC-Q100 Qualified^*2

■ Built-in Over Current Protection Function(OCP)

■ Built-in Active Clamp Function

■ Direct Control Enabled from CMOS Logic IC, etc.

■ On Resistance R_DS(ON)= 160 mΩ (Typ)

(when V_IN= 5 V, I_OUT= 1.0 A, Tj = 25 C)

■ Monolithic Power Management IC with the

Control Block (CMOS) and Power MOS FET

Mounted on a Single Chip

7 A

40 V

90 mJ

Package

HTSOP-J8

W (Typ) x D (Typ) x H (Max)

4.9 mm x 6.0 mm x 1.0 mm

*1 This IC has thermal shutdown (Junction temperature detect)

and ΔTj Protection (Power-MOS steep temperature rising

detect).

*2 Grade1

General Description

BV1LE160EFJ-C is 1ch low side switch IC for 12 V

automotive applications. It has built-in OCP, Dual

TSD and Active Clamp function. It is equipped with

output diagnostic function for TSD.

Application

■ Driving Resistive, Inductive and Capacitive Load

Block Diagram

 Product structure : Silicon integrated circuit  This product has no designed protection against radioactive rays.

www.rohm.com

TSZ22111 • 14 • 001

TSZ02201-0GYG1G400160-1-2

08.Feb.2022 Rev.001

1/25

12 3 4 5 6 7...28

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