Datasheet > BV1LD080EFJ-C (开发中)

BV1LD080EFJ-C (开发中)

更新时间： 2024-12-01 11:15:59

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
28页	2352K
描述
BV1LD080EFJ-C is 1ch low side switch IC for 12V automotive applications. It has built-in OCP, Dual TSD and Active Clamp function. It is equipped with output diagnostic function for TSD.

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Datasheet

Automotive IPD 1ch Low Side Switch

with Output Diagnostic Function

BV1LD080EFJ-C

Features

Key Specifications

■ Built-in Dual TSD^*1

On-state Resistance (Tj = 25 °C, Typ)

Over Current Limitation Level

(Tj = 25 °C, Typ)

Output Clamp Voltage (Min)

Active Clamp Energy (Tj_(START)= 25 °C)

80 mΩ

■ AEC-Q100 Qualified^*2

■ Built-in Over Current Protection Function(OCP)

■ Built-in Active Clamp Function

■ Direct Control Enabled from CMOS Logic IC, etc.

■ On Resistance R_DS(ON)= 80 mΩ (Typ)

(when V_IN= 5 V, I_OUT= 1.5 A, Tj = 25 C)

■ Monolithic Power Management IC with the

Control Block (CMOS) and Power MOS FET

Mounted on a Single Chip

5.5 A

40 V

200 mJ

Package

HTSOP-J8

W (Typ) x D (Typ) x H (Max)

4.9 mm x 6.0 mm x 1.0 mm

*1 This IC has thermal shutdown (Junction temperature detect)

and ΔTj Protection (Power-MOS steep temperature rising

detect).

*2 Grade1

General Description

BV1LD080EFJ-C is 1ch low side switch IC for 12 V

automotive applications. It has built-in OCP, Dual

TSD and Active Clamp function. It is equipped with

output diagnostic function for TSD.

Application

■ Driving Resistive, Inductive and Capacitive Load

Block Diagram

 Product structure : Silicon integrated circuit  This product has no designed protection against radioactive rays.

www.rohm.com

TSZ22111 • 14 • 001

TSZ02201-0GYG1G400260-1-2

20.Feb.2023 Rev.001

1/25

12 3 4 5 6 7...28

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