Datasheet > BV1HB090EFJ-C

BV1HB090EFJ-C

更新时间： 2024-04-09 18:59:50

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
43页	1553K
描述
The BV1HB090EFJ-C single channel 90mΩ Intelligent High Side Power Device integrates an Overcurrent

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BV1HB090EFJ-C 数据手册

Datasheet

Automotive Intelligent Power Device

Single Channel 90 mΩ High Side Switch

BV1HB090EFJ-C

General Description

Key Specifications

◼Supply Nominal Voltage Range:

◼Low Operating Voltage (cranking):

◼Overvoltage Protection:

◼ON Resistance:

◼Overcurrent Limit:

◼Sleep Current:

◼Operating Current:

◼Junction Temperature Range (Tj): -40 °C to +150 °C

The BV1HB090EFJ-C single channel 90 mΩ Intelligent

High Side Power Device integrates an Overcurrent load

protection, a dual Temperature Shutdown mechanism

which limits the internal thermal transients and reduces the

mechanical stress of the IC, and a smart Active-Clamp

circuit to dissipate the magnetic energy while switching off

inductive loads and to protect internal circuits from

overvoltage surges. Embedded Current Sense and

Diagnostic features provide real time load current

information and open or short circuit feedback in both on

and off state. A 3 V and 5 V CMOS compatible input pin

offers direct microcontroller connection without special

interfaces or level shifters. These in conjunction with a wide

input voltage range make the High Side IPD a high-

6 V to 28 V

4 V (Max)

41 V (Min)

90 mΩ (Typ)

15 A (Typ)

0.5 µA (Max)

2.7 mA (Typ)

Package

W (Typ) x D (Typ) x H (Max)

HTSOP-J8

4.9 mm x 6.0 mm x 1.0 mm

performance component suitable for 12

connected automotive applications.

V battery

Features

◼ AEC-Q100 Qualified^{(Note 1)}

◼ Short Circuit Load Protection

◼ Overcurrent Limitation

◼ Active Clamp and Overvoltage Protection

◼ Dual Temperature Shutdown

◼ Undervoltage Lock Out

◼ Integrated Current SENSE Circuit

◼ Loss of Ground Protection

◼ Open Load and Short to Battery Diagnostics

(Note 1) Grade 1

◼ Thermally Enhanced Thin Small-Outline 8 pin

package with 1.27 mm Pin Pitch

◼ Exposed Pad for improved thermal performance

Applications

◼ Driver for Resistive, Inductive and Capacitive Loads

◼ MOSFET, Relay and Fuse Replacement

◼ Intelligent Power Device for 12 V Automotive

Applications

Typical Application Circuit

Z_WIRE

VBB

VDD

I/O

R_IN

Z_WIRE

OUT

R_SEN

I/O

SEN

C_OUT

Z_LOAD

V_BATT

TVS

BV1HB090EFJ-C

C_VBB

R_ADC

ADC

SENSE

Z_WIRE

VSS

GND

C_SENSE

R_SENSE

D_GND

R_GND

Chassis

Ground

PGND

AGND

Figure 1. Typical Application Diagram

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.

www.rohm.com

TSZ22111 • 14 • 001

TSZ02201-0G5G1GC00250-1-2

06.Sep.2023 Rev.001

1/40

12 3 4 5 6 7...43

中文翻译

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