Datasheet > BV1HC045EFJ-C

BV1HC045EFJ-C

更新时间： 2024-11-30 17:01:23

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
36页	1876K
描述
BV1HC045EFJ-C is a 1-ch high-side switch for automotive application. It has built-in over current

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BV1HC045EFJ-C 数据手册

Datasheet

IPD Series

Automotive 1ch 45 mΩ High-Side Switch

with Variable OCD and OCD Mask Function

BV1HC045EFJ-C

General Description

Key Specifications

BV1HC045EFJ-C is a 1-ch high-side switch for

automotive application. It has built-in over current

protection function, thermal shutdown protection function,

open load detection function and under voltage lockout

function. It is equipped with diagnostic output function for

abnormality detection. Since this IC can arbitrarily set the

over current protection value and the time until the limit is

set by an external component, the optimum over current

protection for the load can be easily realized.

◼ Power Supply Voltage Operating Range: 6 V to 28 V

◼ On Resistance (Tj = 25 °C):

◼ Over Current Limit:

◼ Standby Current (Tj = 25 °C):

45 mΩ (Typ)

21 A (Min)

0.5 μA (Max)

◼ Active Clamp Tolerance (Tj_(START)= 25 °C): 50 mJ

Package

HTSOP-J8

W (Typ) x D (Typ) x H (Max)

4.9 mm x 6.0 mm x 1.0 mm

Features

◼

Dual TSD^{(Note 1)}

AEC-Q100 Qualified^{(Note 2)}

Built-in Variable Over Current Limit Function

Built-in Variable Over Current Mask Time Setting

Function.

◼

Built-in Open Load Detection Function.

Built-in Under Voltage Lockout Function (UVLO)

Built-in Diagnostic Output

Low On-Resistance R_ON= 45 mΩ (Typ)

Monolithic Power Management IC with Control Unit

(CMOS) and Power MOSFET on a Single Chip

Low Voltage Operation (V_BB= 4.3 V)

HTSOP-J8

◼

(Note 1) This IC has thermal shutdown (Junction temperature detect)

and ΔTj Protection (Power-MOS steep temperature rising

detect).

(Note 2) Grade 1

Applications

Resistive Load, Inductive Load, Capacitive Load

◼

Typical Application Circuit

R_STPU

VBB

C_VBB

R_IN

OUT

R_ST

MCU

R_L

BV1HC045EFJ-C

DLY

SET

CDLY

GND

R_SET

R_GND

D_GND

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.

www.rohm.com

TSZ22111 • 14 • 001

TSZ02201-0G5G1GC00220-1-2

16.Nov.2023 Rev.001

1/33

12 3 4 5 6 7...36

中文翻译

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