Datasheet > BUS50/D

BUS50/D

更新时间： 2024-09-09 23:37:23

品牌	Logo	应用领域
其他 - ETC		晶体开关晶体管
页数	文件大小	规格书
4页	50K
描述
SWITCHMODE? Series NPN Silicon Power Transistors

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BUS50/D 数据手册

ON Semiconductort

BUS50

SWITCHMODEt Series

NPN Silicon Power Transistors

70 AMPERES

NPN SILICON

POWER TRANSISTOR

125 VOLTS (BVCEO)

350 WATTS

The BUS50 transistor is designed for low voltage, high–speed,

power switching in inductive circuits where fall time is critical. It is

particularly suited for battery SWITCHMODE applications such as:

200 V (BVCES)

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Fast Turn–Off Times

300 ns Inductive Fall Time –25_C (Typ)

• Operating Temperature Range –65 to +200_C

CASE 197A–05

TO–204AE

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Emitter Base Voltage

Symbol

BUS50

125

200

Unit

Vdc

Adc

CEO(sus)

CEV

Collector Current — Continuous

— Peak (1)

140

— Overload

Base Current — Continuous

— Peak (1)

Adc

Total Power Dissipation — T = 25°C

350

200

Watts

— T = 100°C

Derate above 25_C

Operating and Storage Junction

Temperature Range

W/_C

T , T

–65 to +200

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

0.5

Unit

_C/W

Thermal Resistance, Junction to Case

Maximum Lead Temperature

for Soldering Purposes:

275

1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle x10%.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 9

BUS50/D

12 3 4

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