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BUS50 PDF预览

BUS50

更新时间: 2024-09-09 22:27:59
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安森美 - ONSEMI 晶体晶体管
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4页 118K
描述
SWITCHMODE Series NPN Silicon Power Transistors

BUS50 数据手册

 浏览型号BUS50的Datasheet PDF文件第2页浏览型号BUS50的Datasheet PDF文件第3页浏览型号BUS50的Datasheet PDF文件第4页 
Order this document  
by BUS50/D  
SEMICONDUCTOR TECHNICAL DATA  
70 AMPERES  
NPN SILICON  
POWER TRANSISTOR  
125 VOLTS (BVCEO)  
350 WATTS  
The BUS50 transistor is designed for low voltage, high–speed, power switching in  
inductive circuits where fall time is critical. It is particularly suited for battery  
switchmode applications such as:  
200 V (BVCES)  
Switching Regulators  
Inverters  
Solenoid and Relay Drivers  
Motor Controls  
Fast Turn–Off Times  
300 ns Inductive Fall Time 25 C (Typ)  
Operating Temperature Range 65 to +200 C  
CASE 197A–05  
TO–204AE  
MAXIMUM RATINGS  
Rating  
Symbol  
BUS50  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
125  
200  
7
CEO(sus)  
V
CEV  
V
EB  
Collector Current — Continuous  
— Peak (1)  
I
C
70  
140  
I
CM  
I
oI  
— Overload  
Base Current — Continuous  
— Peak (1)  
I
20  
Adc  
B
I
BM  
Total Power Dissipation — T = 25°C  
P
350  
200  
2
Watts  
C
D
— T = 100°C  
C
Derate above 25 C  
W/ C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
J
65 to +200  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
0.5  
Unit  
C/W  
C
Thermal Resistance, Junction to Case  
R
θJC  
Maximum Lead Temperature  
for Soldering Purposes:  
T
L
275  
1/8from Case for 5 Seconds  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.  
SWITCHMODE is a trademark of Motorola, Inc.  
REV 7  
Motorola, Inc. 1995

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